High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells

2010 ◽  
Vol 97 (2) ◽  
pp. 023504 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Junpei Irikawa ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
High Quality ◽  
Heterojunction Solar Cells ◽  
Cubic Silicon Carbide ◽  
Silicon Heterojunction Solar Cells

Amorphous Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells: A Comprehensive Study of the Photocarrier Collection

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 3926-3932 ◽  
Author(s):  
Maarten W. M. van Cleef ◽  
Francisco A. Rubinelli ◽  
Rita Rizzoli ◽  
Roberto Pinghini ◽  
Ruud E. I. Schropp ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Amorphous Silicon Carbide ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells ◽  
Comprehensive Study

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

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