Instabilities of metal‐oxide‐semiconductor transistor with high‐temperature annealing of its gate oxide in ammonia

1990 ◽  
Vol 67 (11) ◽  
pp. 7132-7138 ◽  
Author(s):  
H. Wong ◽  
Y. C. Cheng
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temperature Annealing

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects
Sign in / Sign up

Export Citation Format

Share Document