Single carrier devices with electrical doped layers for the characterization of charge-carrier transport in organic thin-films

2010 ◽  
Vol 97 (1) ◽  
pp. 013303 ◽  
Author(s):  
Matthias Schober ◽  
Selina Olthof ◽  
Mauro Furno ◽  
Björn Lüssem ◽  
Karl Leo
2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.


2016 ◽  
Vol 9 (6) ◽  
pp. 065801 ◽  
Author(s):  
Rajendra Dahal ◽  
Kawser Ahmed ◽  
Jia Woei Wu ◽  
Adam Weltz ◽  
James Jian-Qiang Lu ◽  
...  

ACS Nano ◽  
2017 ◽  
Vol 11 (3) ◽  
pp. 2706-2713 ◽  
Author(s):  
Dana D. Medina ◽  
Michiel L. Petrus ◽  
Askhat N. Jumabekov ◽  
Johannes T. Margraf ◽  
Simon Weinberger ◽  
...  

2017 ◽  
Vol 9 (51) ◽  
pp. 44799-44810 ◽  
Author(s):  
Ban Xuan Dong ◽  
Joseph Strzalka ◽  
Zhang Jiang ◽  
Huanghe Li ◽  
Gila E. Stein ◽  
...  

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