Enhanced diffusion upon amorphous-to-nanocrystalline phase transition in Mo/B4C/Si layered systems

2010 ◽  
Vol 108 (1) ◽  
pp. 014314 ◽  
Author(s):  
V. I. T. A. de Rooij-Lohmann ◽  
A. E. Yakshin ◽  
R. W. E. van de Kruijs ◽  
E. Zoethout ◽  
A. W. Kleyn ◽  
...  
2014 ◽  
Vol 29 (4) ◽  
pp. 542-555 ◽  
Author(s):  
P. Suchismita Behera ◽  
Desapogu Rajesh ◽  
Sreejith Karthikeyan ◽  
C.S. Sunandana ◽  
D. Bharathi Mohan

Abstract


1999 ◽  
Vol 12 (5-8) ◽  
pp. 875-878 ◽  
Author(s):  
Y.M. Soifer ◽  
N.P. Kobelev ◽  
L.G. Brodova ◽  
A.N. Mannkhin ◽  
E. Korin ◽  
...  

1996 ◽  
Vol 420 ◽  
Author(s):  
M. Scheib ◽  
B. Schrcder ◽  
H. Oechsner

AbstractA novel plasma based chemical vapour deposition (PECVD) technique employing electron cyclotron wave resonance (ECWR) for plasma excitation was applied to the deposition of hydrogenated nanocrystalline silicon (nc-Si:H) films. nc-Si:H films were produced at deposition rates up to 8Å/sec (TS = 200°C) with a pure SiH4 plasma in contrast to the conventional glow discharge technique where the high hydrogen dilution usually needed leads to considerable lower deposition rates. The amorphous-to-nanocrystalline phase transition was investigated in dependence of substrate temperature, the hf-power and magnetic field mandatory for ECWR, and SiH4-flow into the plasma. With the knowledge of the plasma parameters derived from single probe measurements, and the intensities of excited plasma species detected by means of optical emission spectroscopy we can qualitatively describe the silane-plasma dissociation behaviour. The nanocrystalline phase is found to be always deposited when the dissociation degree of the SiH4 plasma is almost saturated.


2014 ◽  
Vol 56 (5) ◽  
pp. 1071-1080 ◽  
Author(s):  
L. S. Parfen’eva ◽  
T. S. Orlova ◽  
B. I. Smirnov ◽  
I. A. Smirnov ◽  
H. Misiorek ◽  
...  

Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.


Author(s):  
Uwe Lücken ◽  
Joachim Jäger

TEM imaging of frozen-hydrated lipid vesicles has been done by several groups Thermotrophic and lyotrophic polymorphism has been reported. By using image processing, computer simulation and tilt experiments, we tried to learn about the influence of freezing-stress and defocus artifacts on the lipid polymorphism and fine structure of the bilayer profile. We show integrated membrane proteins do modulate the bilayer structure and the morphology of the vesicles.Phase transitions of DMPC vesicles were visualized after freezing under equilibrium conditions at different temperatures in a controlled-environment vitrification system. Below the main phase transition temperature of 24°C (Fig. 1), vesicles show a facetted appearance due to the quasicrystalline areas. A gradual increase in temperature leads to melting processes with different morphology in the bilayer profile. Far above the phase transition temperature the bilayer profile is still present. In the band-pass-filtered images (Fig. 2) no significant change in the width of the bilayer profile is visible.


Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.


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