Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth

2010 ◽  
Vol 97 (4) ◽  
pp. 041906 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Akihisa Sai ◽  
Yoshio Ohshita ◽  
Itaru Kamiya ◽  
...  
Keyword(s):  
Real Time ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Anisotropic Strain ◽  
Time Observation ◽  
Real Time Observation

Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping

2012 ◽  
Vol 725 ◽  
pp. 89-92 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Real Time ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Relaxation Processes ◽  
Misfit Dislocations ◽  
Reciprocal Space Mapping ◽  
Relaxation Phase ◽  
Rsm Technique

The effects of In incorporation on anisotropies in the strain relaxation mechanisms of InGaAs on GaAs systems are investigated using a three-dimensional reciprocal space mapping (3D-RSM) technique. Relaxation processes are classified as belonging to one of the following four phases: no relaxation, gradual relaxation, rapid relaxation, and relaxation saturation. Anisotropies appear in the gradual relaxation phase and almost disappear in the rapid relaxation phase. These anisotropies are enhanced by In content. When In content is low, both α- and β-misfit dislocations (MDs) are observed at the same thickness; the density of α-MDs increases more rapidly than that of β-MDs. When In content is high, only α-MDs appear in the gradual relaxation phase. These results suggest that In atoms prevent nucleation and/or gliding of β-MDs.

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

2012 ◽  
Vol 45 (5) ◽  
pp. 1046-1053 ◽  
Author(s):  
Wen Hu ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Miwa Kozu ◽  
Masamitu Takahasi
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Relaxation Process ◽  
Real Time ◽  
High Speed ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real-time monitoring of the strain relaxation process during the growth of a thin-film heterostructure consisting of In0.07Ga0.93As and In0.18Ga0.82As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In0.07Ga0.93As layer was induced by the growth of the second In0.18Ga0.82As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.

X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

1996 ◽  
Vol 79 (7) ◽  
pp. 3578-3584 ◽  
Author(s):  
J. A. Olsen ◽  
E. L. Hu ◽  
S. R. Lee ◽  
I. J. Fritz ◽  
A. J. Howard ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN

2015 ◽  
Vol 48 (4) ◽  
pp. 1000-1010 ◽  
Author(s):  
Sondes Bauer ◽  
Sergey Lazarev ◽  
Martin Bauer ◽  
Tobias Meisch ◽  
Marian Caliebe ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Stacking Faults ◽  
Vapour Phase ◽  
Stacking Fault ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Partial Dislocations ◽  
Semipolar Gan

A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20 bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of the crystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal–organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other types of defect such as partial dislocations and prismatic stacking faults. Three-dimensional reciprocal-space mapping is specifically used in the manuscript to determine basal stacking faults quantitatively and to discuss the presence of partial dislocations. This newly developed method has been applied to semipolar GaN structures grown on patterned sapphire substrates (PSSs). The fitting of the diffuse scattering intensity profiles along the stacking fault streaks with simulations based on a Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. Three-dimensional reciprocal-space mapping is shown to be a method sensitive to the influence of crystallographic surface orientation on basal stacking fault densities during investigation of semipolar (11{\overline 2}2) GaN grown on anr-plane (1{\overline 1}02) PSS and semipolar (10{\overline 1}1) GaN grown on ann-plane (11{\overline 2}3) PSS. Moreover, the influence of HVPE overgrowth at reduced temperature on the quality of semipolar (11{\overline 2}2) GaN has been studied.

Investigation of strain relaxation in short-period Si m Ge n superlattices using reciprocal space mapping

1993 ◽  
Author(s):  
E. Koppensteiner ◽  
P. Hamberger ◽  
Guenther E. Bauer ◽  
Horst Kibbel ◽  
Hartmut Presting ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Short Period

scholarly journals Erratum: “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth” [J. Appl. Phys. 110, 113502 (2011)]

2013 ◽  
Vol 113 (19) ◽  
pp. 199901
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
Itaru Kamiya ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

2011 ◽  
Vol 110 (11) ◽  
pp. 113502 ◽  
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
Itaru Kamiya ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray
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