scholarly journals Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation

2010 ◽  
Vol 108 (3) ◽  
pp. 033709 ◽  
Author(s):  
S. Bala Kumar ◽  
M. B. A. Jalil ◽  
S. G. Tan ◽  
Gengchiau Liang
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Graphene Nanoribbon ◽  
Band Gap Modulation ◽  
Magnetoresistive Effect

Strain-induced asymmetric modulation of band gap in narrow armchair-edge graphene nanoribbon

2015 ◽  
Vol 29 (34) ◽  
pp. 1550224 ◽  
Author(s):  
Hui Fang ◽  
Fei-Peng Zhang ◽  
Zhi-Nian Jiang ◽  
Jin-Yun Peng ◽  
Ru-Zhi Wang
Keyword(s):  
Band Structure ◽  
Fermi Level ◽  
Band Gap ◽  
Tensile Strain ◽  
Graphene Nanoribbons ◽  
Graphene Nanoribbon ◽  
Asymmetric Modulation ◽  
Asymmetric Behavior ◽  
Valence Bands ◽  
Band Gap Modulation

We investigate the band structure of narrow armchair-edge graphene nanoribbons (AGNRs) under tensile strain by means of an extension of the Extended Hückel method. The strain-induced band gap modulation presents asymmetric behavior. The asymmetric modulation of band gap is derived from the different changes of conduction and valence bands near Fermi level under tensile strain. Further analysis suggests that the asymmetric variation of band structure near Fermi level only appear in narrow armchair-edge graphene nanoribbons.

Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

2013 ◽  
Vol 547 ◽  
pp. 59-62 ◽  
Author(s):  
Jie Jiang ◽  
Liping Zhu ◽  
Yang Li ◽  
Yanmin Guo ◽  
Weishun Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Band Gap Modulation

REMINDER: CrystEngComm - Invitation to submit an article Band gap modulation of organic-inorganic Sb(Ⅲ) halide by molecular design

CrystEngComm ◽  
2022 ◽  
Author(s):  
Yan-Ning Wang ◽  
Liang Tong ◽  
Min Wan ◽  
Jing-Yuan Liu ◽  
Si-Yu Ye ◽  
...  
Keyword(s):  
Metal Ions ◽  
Band Gap ◽  
Hybrid Materials ◽  
Molecular Design ◽  
Structural Diversity ◽  
Inorganic Hybrid ◽  
Band Gap Modulation

Organic-inorganic hybrid materials have structural diversity and flexibility. The introduction of Sb(Ⅲ) metal ions in the inorganic part can bring about semiconductor performance. In this paper, we successfully adjusted the...

NONRECIPROCAL ELECTROMAGNETIC DEVICES IN GYROMAGNETIC PHOTONIC CRYSTALS

2013 ◽  
Vol 28 (02) ◽  
pp. 1441010 ◽  
Author(s):  
ZHI-YUAN LI ◽  
RONG-JUAN LIU ◽  
LIN GAN ◽  
JIN-XIN FU ◽  
JIN LIAN
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electromagnetic Waves ◽  
Experimental Studies ◽  
Magnetic Surface ◽  
Electromagnetic Properties ◽  
Edge States ◽  
Bragg Scattering ◽  
Electromagnetic Devices ◽  
Gap Opening

Gyromagnetic photonic crystal (GPC) offers a promising way to realize robust transport of electromagnetic waves against backscattering from various disorders, perturbations and obstacles due to existence of unique topological electromagnetic states. The dc magnetic field exerting upon the GPC brings about the time-reversal symmetry breaking, splits the band degeneracy and opens band gaps where the topological chiral edge states (CESs) arise. The band gap can originate either from long-range Bragg-scattering effect or from short-range localized magnetic surface plasmon resonance (MSP). These topological edge states can be explored to construct backscattering-immune one-way waveguide and other nonreciprocal electromagnetic devices. In this paper we review our recent theoretical and experimental studies of the unique electromagnetic properties of nonreciprocal devices built in GPCs. We will discuss various basic issues like experimental instrumental setup, sample preparations, numerical simulation methods, tunable properties against magnetic field, band degeneracy breaking and band gap opening and creation of topological CESs. We will investigate the unidirectional transport properties of one-way waveguide under the influence of waveguide geometries, interface morphologies, intruding obstacles, impedance mismatch, lattice disorders, and material dissipation loss. We will discuss the unique coupling properties between one-wave waveguide and resonant cavities and their application as novel one-way bandstop filter and one-way channel-drop filter. We will also compare the CESs created in the Bragg-scattering band gap and the MSP band gap under the influence of lattice disorders. These results can be helpful for designing and exploring novel nonreciprocal electromagnetic devices for optical integration and information processing.

scholarly journals Band Gap Modulation in Zirconium-Based Metal-Organic Frameworks by Defect Engineering

2019 ◽  
Author(s):  
Marco Taddei ◽  
Giulia M. Schukraft ◽  
Michael E. A. Warwick ◽  
Davide Tiana ◽  
Matthew McPherson ◽  
...  
Keyword(s):  
Band Gap ◽  
Gas Phase ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Benzoic Acids ◽  
Defect Engineering ◽  
Metal Organic ◽  
Band Gap Modulation ◽  
Valence Band Energy ◽  
Defective Sites

We report a defect-engineering approach to modulate the band gap of zirconium-based metal-organic framework UiO-66, enabled by grafting of a range of amino-functionalised benzoic acids at defective sites. Defect engineered MOFs were obtained by both post-synthetic exchange and modulated synthesis, featuring band gap in the 4.1-3.3 eV range. Ab-initio calculations suggest that shrinking of the band gap is mainly due to an upward shift of the valence band energy, as a result of the presence of light-absorbing monocarboxylates. The photocatalytic properties of defect-engineered MOFs towards CO<sub>2</sub> reduction to CO in the gas phase and degradation of Rhodamine B in water were tested, observing improved activity in both cases, in comparison to a defective UiO-66 bearing formic acid as the defect-compensating species.

scholarly journals Energy Gaps in BN/GNRs Planar Heterostructure

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5079
Author(s):  
Jinyue Guan ◽  
Lei Xu
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Band Gap ◽  
Lattice Mismatch ◽  
Tight Binding ◽  
Graphene Nanoribbon ◽  
Band Gaps ◽  
Energy Gaps ◽  
Local Potentials

Using the tight-binding approach, we study the band gaps of boron nitride (BN)/ graphene nanoribbon (GNR) planar heterostructures, with GNRs embedded in a BN sheet. The width of BN has little effect on the band gap of a heterostructure. The band gap oscillates and decreases from 2.44 eV to 0.26 eV, as the width of armchair GNRs, nA, increases from 1 to 20, while the band gap gradually decreases from 3.13 eV to 0.09 eV, as the width of zigzag GNRs, nZ, increases from 1 to 80. For the planar heterojunctions with either armchair-shaped or zigzag-shaped edges, the band gaps can be manipulated by local potentials, leading to a phase transition from semiconductor to metal. In addition, the influence of lattice mismatch on the band gap is also investigated.

Band gap modulation of ZnTe1-xOx alloy film by control of oxygen gas flow rate during reactive magnetron sputtering

2013 ◽  
Vol 103 (26) ◽  
pp. 263901 ◽  
Author(s):  
Dong Uk Lee ◽  
Seon Pil Kim ◽  
Kyoung Su Lee ◽  
Sang Woo Pak ◽  
Eun Kyu Kim
Keyword(s):  
Magnetron Sputtering ◽  
Band Gap ◽  
Flow Rate ◽  
Gas Flow ◽  
Alloy Film ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Gas Flow Rate ◽  
Oxygen Gas ◽  
Band Gap Modulation
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