Molecular anion formation in 9,10-anthraquinone: Dependence of the electron detachment rate on temperature and incident electron energy

2010 ◽  
Vol 132 (24) ◽  
pp. 244313 ◽  
Author(s):  
Stanislav A. Pshenichnyuk ◽  
Alexander S. Vorob’ev ◽  
Nail L. Asfandiarov ◽  
Alberto Modelli
Keyword(s):  
Electron Energy ◽  
Incident Electron ◽  
Incident Electron Energy ◽  
Electron Detachment ◽  
Molecular Anion ◽  
Anion Formation ◽  
Detachment Rate

Dependence of charge buildup in the polyimide on the incident electron energy

2006 ◽  
Vol 100 (3) ◽  
pp. 034913 ◽  
Author(s):  
S. K. Mahapatra ◽  
S. D. Dhole ◽  
V. N. Bhoraskar ◽  
Gorur G. Raju
Keyword(s):  
Electron Energy ◽  
Incident Electron ◽  
Incident Electron Energy

scholarly journals Out-of-plane ( e,2e ) measurements and calculations on He autoionizing levels as a function of incident-electron energy

2018 ◽  
Vol 97 (5) ◽  
Author(s):  
N. L. S. Martin ◽  
C. M. Weaver ◽  
B. N. Kim ◽  
B. A. deHarak ◽  
O. Zatsarinny ◽  
...  
Keyword(s):  
Electron Energy ◽  
Incident Electron ◽  
Incident Electron Energy ◽  
Out Of Plane

scholarly journals Measurements of electron emission under electron impact on BN sample for incident electron energy between 10 eV and 1000 eV

2019 ◽  
Vol 127 (2) ◽  
pp. 23001 ◽  
Author(s):  
M. Villemant ◽  
M. Belhaj ◽  
P. Sarrailh ◽  
S. Dadouch ◽  
L. Garrigues ◽  
...  
Keyword(s):  
Electron Impact ◽  
Electron Energy ◽  
Electron Emission ◽  
Incident Electron ◽  
Incident Electron Energy

4-Bromobiphenyl: Long-lived molecular anion formation and competition between electron detachment and dissociation

2019 ◽  
Vol 150 (11) ◽  
pp. 114304 ◽  
Author(s):  
N. L. Asfandiarov ◽  
S. A. Pshenichnyuk ◽  
R. G. Rakhmeyev ◽  
R. F. Tuktarov ◽  
N. L. Zaitsev ◽  
...  
Keyword(s):  
Electron Detachment ◽  
Molecular Anion ◽  
Anion Formation

Angular distributions of the 12C(e,p)e′ reaction at Ee = 200 MeV

1981 ◽  
Vol 59 (2) ◽  
pp. 271-274 ◽  
Author(s):  
G. J. Lolos ◽  
S. Hontzeas ◽  
R. M. Sealock
Keyword(s):  
Electron Energy ◽  
Cross Sections ◽  
Differential Cross ◽  
Proton Energy ◽  
Incident Electron ◽  
Incident Electron Energy ◽  
Angular Distributions ◽  
Differential Cross Sections ◽  
Good Agreement

Double differential cross sections at six angles ranging from 45° to 143° have been measured for the 12C(e,p)e′ reaction. The proton energy ranged from 15.6 to 17.2 MeV at an incident electron energy of 200 MeV. At the backward angles our results are in good agreement with data reported by Vysotskaya and Afanas'ev but for forward angles the results are lower.

The reaction 7Li(e, 3H)4He,e′ between 6 and 15 MeV

1977 ◽  
Vol 55 (3) ◽  
pp. 252-253 ◽  
Author(s):  
M. K. Leung ◽  
J. J. Murphy II ◽  
Y. M. Shin ◽  
D. M. Skopik
Keyword(s):  
Energy Range ◽  
Electron Energy ◽  
Cross Sections ◽  
Electric Dipole ◽  
Incident Electron ◽  
Incident Electron Energy ◽  
Sum Rule

Tritons resulting from the electrodisintegration of 7Li have been measured at 90° for an incident electron energy of 23.8 MeV over an energy range which ensured that only tritons emitted in the two-body channel were detected. The electrodisintegration cross sections were converted to equivalent photodisintegration data and compared to earlier results. Large discrepancies are observed. It is found that the (γ,3H) channel contributes appreciably to the electric dipole sum rule for 7Li.

Three-Dimensional Electron Energy Deposition Modeling of Cathodoluminescence Emission near Threading Dislocations in GaN and Electron-Beam Lithography Exposure Parameters for a PMMA Resist

2012 ◽  
Vol 18 (6) ◽  
pp. 1220-1228 ◽  
Author(s):  
Hendrix Demers ◽  
Nicolas Poirier-Demers ◽  
Matthew R. Phillips ◽  
Niels de Jonge ◽  
Dominique Drouin
Keyword(s):  
Electron Beam ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Signal To Noise Ratio ◽  
Three Dimensional ◽  
Incident Electron ◽  
Incident Electron Energy ◽  
Threading Dislocations ◽  
Deposited Energy

AbstractThe Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimensional (3D) volume. Two examples are presented of the application of these new capabilities of CASINO. First, the CL emission near threading dislocations in gallium nitride (GaN) was modeled. The CL emission simulation of threading dislocations in GaN demonstrated that a better signal-to-noise ratio was obtained with lower incident electron energy than with higher energy. Second, the capability to simulate the distribution of the deposited energy in 3D was used to determine exposure parameters for polymethylmethacrylate resist using electron-beam lithography (EBL). The energy deposition dose in the resist was compared for two different multibeam EBL schemes by changing the incident electron energy.

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