A numerical simulation of rf glow discharge containing an electronegative gas composition

1990 ◽  
Vol 67 (7) ◽  
pp. 3264-3268 ◽  
Author(s):  
Yong‐Ho Oh ◽  
Nak‐Heon Choi ◽  
Duk‐In Choi
1980 ◽  
Vol 13 (6) ◽  
pp. L101-L105 ◽  
Author(s):  
D Mangalaraj ◽  
M Radhakrishnan ◽  
C Balasubramanian ◽  
A R Kasilingam

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
E. A. Ramsay ◽  
R. S. Crandall ◽  
S. J. Salomon ◽  
...  

ABSTRACTWe have studied methods of improving glow-discharge-deposited a-Si1−x Gex :H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.


2020 ◽  
Vol 149 ◽  
pp. 105927
Author(s):  
Štěpánka Kelarová ◽  
Vojtěch Homola ◽  
Monika Stupavká ◽  
Martin Čermák ◽  
Jiří Vohánka ◽  
...  

2009 ◽  
Vol 11 (7) ◽  
pp. 1817-1822 ◽  
Author(s):  
Leron Vandsburger ◽  
Edward J. Swanson ◽  
Jason Tavares ◽  
Jean-Luc Meunier ◽  
Sylvain Coulombe

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