Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6

2010 ◽  
Vol 107 (12) ◽  
pp. 123304 ◽  
Author(s):  
M. Draghici ◽  
E. Stamate
Keyword(s):  
Negative Ions ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

scholarly journals Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)]

2020 ◽  
Vol 128 (8) ◽  
pp. 089901
Author(s):  
Chenhui Qu ◽  
Steven J. Lanham ◽  
Steven C. Shannon ◽  
Sang Ki Nam ◽  
Mark J. Kushner
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Power Matching ◽  
Coupled Plasmas

Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas

2006 ◽  
Vol 83 (2) ◽  
pp. 328-335 ◽  
Author(s):  
S.W. Na ◽  
M.H. Shin ◽  
Y.M. Chung ◽  
J.G. Han ◽  
S.H. Jeung ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

scholarly journals Nonlinear electromagnetic fields in 0.5 MHz inductively coupled plasmas

2003 ◽  
Vol 10 (4) ◽  
pp. 1146-1151 ◽  
Author(s):  
K. Ostrikov ◽  
E. Tsakadze ◽  
S. Xu ◽  
S. V. Vladimirov ◽  
R. Storer
Keyword(s):  
Electromagnetic Fields ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Inductively Coupled Plasmas

1974 ◽  
Vol 46 (13) ◽  
pp. 1155A-1162A ◽  
Author(s):  
Velmer A. Fassel ◽  
Richard N. Kniseley
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain

1998 ◽  
Vol 512 ◽  
Author(s):  
Hyun Cho ◽  
T. Maeda ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Coupled Plasmas

ABSTRACTAnisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.

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