Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

2010 ◽  
Vol 96 (25) ◽  
pp. 252907 ◽  
Author(s):  
Byungha Shin ◽  
Jonathon B. Clemens ◽  
Michael A. Kelly ◽  
Andrew C. Kummel ◽  
Paul C. McIntyre
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Half Cycle ◽  
Layer Deposition

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

2012 ◽  
Vol 101 (21) ◽  
pp. 211604 ◽  
Author(s):  
Barry Brennan ◽  
Xiaoye Qin ◽  
Hong Dong ◽  
Jiyoung Kim ◽  
Robert M. Wallace
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Half Cycle ◽  
Layer Deposition

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

2008 ◽  
Vol 93 (20) ◽  
pp. 202902 ◽  
Author(s):  
M. Milojevic ◽  
F. S. Aguirre-Tostado ◽  
C. L. Hinkle ◽  
H. C. Kim ◽  
E. M. Vogel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Half Cycle ◽  
Layer Deposition

scholarly journals Direct Measurements of Half-Cycle Reaction Heats during Atomic Layer Deposition by Calorimetry

2017 ◽  
Vol 29 (20) ◽  
pp. 8566-8577 ◽  
Author(s):  
James M. Lownsbury ◽  
James A. Gladden ◽  
Charles T. Campbell ◽  
In Soo Kim ◽  
Alex B. F. Martinson
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Half Cycle ◽  
Layer Deposition ◽  
Direct Measurements

Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

2012 ◽  
Vol 18 (S2) ◽  
pp. 906-907
Author(s):  
B. Granados ◽  
F. Lie ◽  
A. Muscat
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Atomic Layer ◽  
Half Cycle ◽  
Layer Deposition

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

scholarly journals Integrating Feedback Control and Run-to-Run Control in Multi-Wafer Thermal Atomic Layer Deposition of Thin Films

Processes ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 18 ◽  
Author(s):  
Yichi Zhang ◽  
Yangyao Ding ◽  
Panagiotis D. Christofides
Keyword(s):  
Thin Film ◽  
Feedback Control ◽  
Atomic Layer Deposition ◽  
Cycle Time ◽  
Atomic Layer ◽  
Operating Conditions ◽  
Half Cycle ◽  
Cfd Model ◽  
Layer Deposition ◽  
Control Scheme

There is currently a lack of understanding of the deposition profile in a batch atomic layer deposition (ALD) process. Also, no on-line control scheme has been proposed to resolve the prevalent disturbances. Motivated by this, we develop a computational fluid dynamics (CFD) model and an integrated online run-to-run and feedback control scheme. Specifically, we analyze a furnace reactor for a SiO2 thin-film ALD with BTBAS and ozone as precursors. Initially, a high-fidelity 2D axisymmetric multiscale CFD model is developed using ANSYS Fluent for the gas-phase characterization and the surface thin-film deposition, based on a kinetic Monte-Carlo (kMC) model database. To deal with the disturbance during reactor operation, a proportional integral (PI) control scheme is adopted, which manipulates the inlet precursor concentration to drive the precursor partial pressure to the set-point, ensuring the complete substrate coverage. Additionally, the CFD model is utilized to investigate a wide range of operating conditions, and a regression model is developed to describe the relationship between the half-cycle time and the feed flow rate. A run-to-run (R2R) control scheme using an exponentially weighted moving average (EWMA) strategy is developed to regulate the half-cycle time for the furnace ALD process between batches.

scholarly journals First-Principles Studies of Nucleation of Atomic-Layered Molybdenum Disulfide by Atomic Layer Deposition

2021 ◽  
Author(s):  
Matthew Lawson
Keyword(s):  
Atomic Layer Deposition ◽  
Molybdenum Disulfide ◽  
First Principles ◽  
Density Functional ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Half Cycle ◽  
Scale Thickness ◽  
Layer Deposition ◽  
Nucleation Mechanisms

This dissertation implements first-principles calculations to understand the nucleation mechanisms for atomic layer deposition (ALD) of molybdenum disulfide (MoS2) using MoF6 and H2S precursors. ALD is a self-limiting process that can deposit a range of materials at the nanoscale, while maintaining chemical stoichiometry, atomic scale thickness control, and can conform to high-aspect ratio substrate designs. ALD is extremely sensitive to surface chemistry and morphology; therefore, it is critical to understand how these factors control deposition. Density functional theory (DFT) was used to understand what factors can control the nucleation for ALD of MoS2 using MoF6 and H2S. Surface hydroxyls on oxide substrates help facilitate the formation of ionic MFx (M = metal, x = 1, 2, 3) species, which thermodynamically drive the first-half cycle of ALD. DFT calculations were supported by experimental measurements to validate computational predictions. DFT and experiment both confirmed that there are different types of nucleation mechanisms during ALD of MoS2. The types of mechanisms depend on which precursor is introduced, and highlights the complexities during nucleation of MoS2 during ALD.

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