Monte Carlo studies of band‐tail effects on the recombination kinetics in heavily doped silicon

1990 ◽  
Vol 67 (12) ◽  
pp. 7393-7398 ◽  
Author(s):  
Y. Pan
Keyword(s):  
Monte Carlo ◽  
Band Tail ◽  
Monte Carlo Studies ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Recombination Kinetics

Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks

2017 ◽  
Vol 13 (12) ◽  
pp. 6061-6067 ◽  
Author(s):  
R. Derian ◽  
K. Tokár ◽  
B. Somogyi ◽  
Á. Gali ◽  
I. Štich
Keyword(s):  
Monte Carlo ◽  
Quantum Monte Carlo ◽  
Silicon Nanocrystals ◽  
Doped Silicon ◽  
Heavily Doped

BAND-TAIL SHOCKLEY-READ-HALL RECOMBINATION IN HEAVILY DOPED SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-275-C4-280
Author(s):  
M. Y. GHANNAM ◽  
R. P. MERTENS ◽  
S. C. JAIN ◽  
J. F. NIJS ◽  
R. VAN OVERSTRAETEN
Keyword(s):  
Band Tail ◽  
Doped Silicon ◽  
Heavily Doped

scholarly journals Monte Carlo studies of pion distributions from heavy ion collisions

1983 ◽  
Vol 27 (2) ◽  
pp. 606-627 ◽  
Author(s):  
Hafez M. A. Radi ◽  
John O. Rasmussen ◽  
Kenneth A. Frankel ◽  
John P. Sullivan ◽  
H. C. Song
Keyword(s):  
Monte Carlo ◽  
Heavy Ion Collisions ◽  
Heavy Ion ◽  
Ion Collisions ◽  
Monte Carlo Studies

scholarly journals Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 143
Author(s):  
Sitao Fei ◽  
Hao Ren
Keyword(s):  
Quality Factor ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Cryogenic Cooling ◽  
Silicon On Insulator ◽  
Temperature Hysteresis ◽  
Sensing Applications ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Contour Mode

As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

Reverse Monte Carlo studies of nanoporous carbon from TiC

2005 ◽  
Vol 17 (23) ◽  
pp. 3509-3524 ◽  
Author(s):  
Per Zetterström ◽  
Sigita Urbonaite ◽  
Fredrik Lindberg ◽  
Robert G Delaplane ◽  
Jaan Leis ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Nanoporous Carbon ◽  
Reverse Monte Carlo ◽  
Monte Carlo Studies
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