Electrochromic properties of rf‐sputtered tungstic oxide film prepared from a W metal target

1989 ◽  
Vol 66 (9) ◽  
pp. 4364-4367 ◽  
Author(s):  
Hossain Akram ◽  
Michihiko Kitao ◽  
Shoji Yamada
Keyword(s):  
Oxide Film ◽  
Metal Target ◽  
Electrochromic Properties ◽  
Tungstic Oxide

Electrochromic properties of nano-composite nickel oxide film

2008 ◽  
Vol 254 (11) ◽  
pp. 3357-3363 ◽  
Author(s):  
Sheng-Hui Lin ◽  
Fu-Rong Chen ◽  
Ji-Jung Kai
Keyword(s):  
Oxide Film ◽  
Nickel Oxide ◽  
Nano Composite ◽  
Electrochromic Properties ◽  
Nickel Oxide Film

Solid-state pH ultramicrosensor based on a tungstic oxide film fabricated on a tungsten nanoelectrode and its application to the study of endothelial cells

2003 ◽  
Vol 480 (1) ◽  
pp. 109-117 ◽  
Author(s):  
Katsunobu Yamamoto ◽  
Guoyue Shi ◽  
Tianshu Zhou ◽  
Fan Xu ◽  
Min Zhu ◽  
...  
Keyword(s):  
Endothelial Cells ◽  
Solid State ◽  
Oxide Film ◽  
Tungstic Oxide

Controllable crystallinity of nickel oxide film with enhanced electrochromic properties

2018 ◽  
Vol 451 ◽  
pp. 104-111 ◽  
Author(s):  
Shuai Hou ◽  
A.I. Gavrilyuk ◽  
Jiupeng Zhao ◽  
Hongbin Geng ◽  
Na Li ◽  
...  
Keyword(s):  
Oxide Film ◽  
Nickel Oxide ◽  
Electrochromic Properties ◽  
Nickel Oxide Film

Electrochromic properties of sol-gel deposited Ti-doped vanadium oxide film

1999 ◽  
Vol 338 (1-2) ◽  
pp. 201-206 ◽  
Author(s):  
Nilgün Özer ◽  
Sevsen Sabuncu ◽  
John Cronin
Keyword(s):  
Oxide Film ◽  
Vanadium Oxide ◽  
Sol Gel ◽  
Electrochromic Properties

Effects of indium-doped tin oxide film on electrochromic properties under lithium ion guidance

2020 ◽  
Vol 101 ◽  
pp. 109756 ◽  
Author(s):  
Bo Zhang ◽  
Guoyue Xu ◽  
Shujuan Tan ◽  
Chuyang Liu
Keyword(s):  
Oxide Film ◽  
Tin Oxide ◽  
Lithium Ion ◽  
Electrochromic Properties

Deposited emulsion particles in the pores of aluminum oxide film

1978 ◽  
Vol 36 (1) ◽  
pp. 450-451
Author(s):  
Michio Ashida ◽  
Yasukiyo Ueda
Keyword(s):  
Oxide Film ◽  
Acid Solution ◽  
Barrier Layer ◽  
Colloidal Particles ◽  
Oxalic Acid Solution ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Carbon Replica ◽  
Sectioning Method ◽  
Thin Sectioning

An anodic oxide film is formed on aluminum in an acidic elecrolyte during anodizing. The structure of the oxide film was observed directly by carbon replica method(l) and ultra-thin sectioning method(2). The oxide film consists of barrier layer and porous layer constructed with fine hexagonal cellular structure. The diameter of micro pores and the thickness of barrier layer depend on the applying voltage and electrolyte. Because the dimension of the pore corresponds to that of colloidal particles, many metals deposit in the pores. When the oxide film is treated as anode in emulsion of polyelectrolyte, the emulsion particles migrate onto the film and deposit on it. We investigated the behavior of the emulsion particles during electrodeposition.Aluminum foils (99.3%) were anodized in either 0.25M oxalic acid solution at 30°C or 3M sulfuric acid solution at 20°C. After washing with distilled water, the oxide films used as anode were coated with emulsion particles by applying voltage of 200V and then they were cured at 190°C for 30 minutes.

Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

2013 ◽  
Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Microstructure Evolution ◽  
Depth Profiling ◽  
Surface Microstructure ◽  
The Difference ◽  
Surface Microstructures ◽  
Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

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