Evaluation of the trap concentration in highly doped semiconductors from low‐frequency noise spectra

1989 ◽  
Vol 66 (1) ◽  
pp. 219-222 ◽  
Author(s):  
S. Kugler
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Doped Semiconductors ◽  
Trap Concentration ◽  
Noise Spectra

Low-frequency noise spectra in MOSFETs made by the DMOS process

1985 ◽  
Vol 28 (4) ◽  
pp. 325-328 ◽  
Author(s):  
X.C. Zhu ◽  
A. van der Ziel ◽  
K.H. Duh
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectra

Comparison of Pre-and Post-Irradiation Low-Frequency Noise Spectra of Midwave Infrared nBn Detectors With Superlattice Absorbers

2017 ◽  
Vol 64 (4) ◽  
pp. 1042-1047
Author(s):  
Eli A. Garduno ◽  
Vincent M. Cowan ◽  
Geoffrey D. Jenkins ◽  
Christian P. Morath ◽  
Elizabeth H. Steenbergen
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Post Irradiation ◽  
Midwave Infrared ◽  
Noise Spectra

Low‐frequency noise spectra of a superconducting magnetic gradiometer

1977 ◽  
Vol 48 (1) ◽  
pp. 354-357 ◽  
Author(s):  
George H. Gillespie ◽  
Walter N. Podney ◽  
James L. Buxton
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectra

scholarly journals Low-frequency noise of near UV LEDs

2019 ◽  
Vol 59 (3) ◽  
Author(s):  
Justinas Glemža ◽  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Peak Wavelength ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Noise Characteristics ◽  
Noise Spectroscopy ◽  
Uv Leds ◽  
Noise Spectra

Low-frequency noise characteristics of high power near ultraviolet light-emitting diodes (LEDs) with peak radiative wavelengths in a range of 380–410 nm are investigated in a temperature interval of 110–293 K. The defect-assisted tunnelling current component has been observed in some 380 nm peak wavelength samples with corresponding Lorentzian-type electrical noise spectra. Other samples (with a peak wavelength of 390–410 nm) have mainly 1/fα-type electrical fluctuations. Cross-correlation coefficient analysis between electrical and optical fluctuations has been performed in order to evaluate whether the observed defect levels, responsible for additional generation–recombination (g–r) noise components in LEDs noise spectra, are related to the active layer or to the peripheral area of the device. Activation energies of these g–r centres have been also evaluated using g–r noise spectroscopy.

Low-Frequency Noise Spectra of Laterally Bridged ZnO Microrod-Based Photodetectors

2014 ◽  
Vol 20 (6) ◽  
pp. 118-124
Author(s):  
Ming-Yueh Chuang ◽  
Hsin-Chieh Yu ◽  
Yan-Kuin Su ◽  
Chih-Hung Hsiao ◽  
Tsung-Hsien Kao ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectra
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