Buried‐heterostructure semiconductor Raman laser with threshold pump power less than 1 W

1989 ◽  
Vol 66 (11) ◽  
pp. 5151-5155 ◽  
Author(s):  
Ken Suto ◽  
Shigemasa Ogasawara ◽  
Tomoyuki Kimura ◽  
Jun‐ichi Nishizawa
Keyword(s):  
Pump Power ◽  
Raman Laser ◽  
Threshold Pump Power ◽  
Buried Heterostructure

Molecular beam raman laser with a 250 nW threshold pump power

1990 ◽  
Vol 77 (5-6) ◽  
pp. 390-394 ◽  
Author(s):  
Ian Littler ◽  
Stefan Balle ◽  
Klaas Bergmann
Keyword(s):  
Pump Power ◽  
Molecular Beam ◽  
Raman Laser ◽  
Threshold Pump Power

scholarly journals Impact of input FBG reflectivity and forward pump power on RIN transfer in ultralong Raman laser amplifiers

2016 ◽  
Vol 24 (25) ◽  
pp. 29170 ◽  
Author(s):  
Giuseppe Rizzelli ◽  
Md Asif Iqbal ◽  
Francesca Gallazzi ◽  
Paweł Rosa ◽  
Mingming Tan ◽  
...  
Keyword(s):  
Pump Power ◽  
Raman Laser ◽  
Laser Amplifiers

Threshold pump power of a solar‐pumped dye laser

1988 ◽  
Vol 53 (21) ◽  
pp. 2021-2022 ◽  
Author(s):  
Ja H. Lee ◽  
Kyung C. Kim ◽  
Kyong H. Kim
Keyword(s):  
Pump Power ◽  
Dye Laser ◽  
Threshold Pump Power

scholarly journals Threshold Pump Power And Stability Zone Study of A Cw Ti:sa Laser Based on Using Two Different Dielectric Broadband High Reflective Cavity Mirrors

2020 ◽  
Vol 23 (2) ◽  
pp. 70-86
Author(s):  
Awaz Adil Kareem ◽  
Diyar A. S. Sadiq Mayi
Keyword(s):  
Pump Power ◽  
Laser System ◽  
Laser Cavity ◽  
Optical Parameters ◽  
Stability Zone ◽  
Optical Components ◽  
Threshold Pump Power ◽  
Dielectric Mirror ◽  
The Stability ◽  
Stable Laser

The present work study the optical parameters for CW operation in Ti:Sapphire laser system with the focus on stability zone and threshold pump power. The main aim of this study is to explore the influence of a broadband dielectric resonator mirrors used in the laser cavity on the stability zone and threshold pump power. This effect has been determined by using two types of mirrors with different broadband reflection. The experimental results show the dependence of the stability and laser threshold pump on broadband dielectric mirrors. For a broader dielectric mirror, the stability zone shows larger stable distance with respect to the narrower mirror. Moreover, the threshold pump for the broader band is smaller than the narrower. This study allows researcher choosing the appropriate optical components for generating more stable laser with small threshold pump power.

Asymmetric behavior of threshold pump power of Nd:YAG diode end-pumped laser in critical cavity configurations

2019 ◽  
Vol 16 (3) ◽  
pp. 035001 ◽  
Author(s):  
E A Cheshev ◽  
M V Gorbunkov ◽  
P V Kostryukov ◽  
M S Krivonos ◽  
V G Tunkin
Keyword(s):  
Pump Power ◽  
Threshold Pump Power ◽  
Asymmetric Behavior

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

2013 ◽  
Vol 21 (4) ◽  
Author(s):  
A. Tyszka-Zawadzka ◽  
P. Szczepański ◽  
A. Mossakowska-Wyszyńska ◽  
M. Karpierz ◽  
M. Bugaj
Keyword(s):  
Pump Power ◽  
Numerical Solutions ◽  
Analytical Formula ◽  
Raman Laser ◽  
Silicon On Insulator ◽  
Photon Absorption ◽  
Pump Field ◽  
Rib Waveguide ◽  
System Parameters ◽  
Field Distributions

AbstractAn approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.

scholarly journals Diode-Pumped Actively Q-Switched Nd:YVO4/RTP Intracavity Raman Laser at 1.49 µm

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 168
Author(s):  
Yue Jiao ◽  
Zhaojun Liu ◽  
Xingyu Zhang ◽  
Feilong Gao ◽  
Chenyang Jia ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Pump Power ◽  
Average Output Power ◽  
Pulse Repetition Rate ◽  
Frequency Conversion ◽  
Raman Laser ◽  
Laser Medium ◽  
Average Output ◽  
Diode Pumped ◽  
First Time

For the first time, a diode-pumped actively Q-switched Nd:YVO4/RbTiOPO4 (RTP) intracavity Raman laser at 1.49 µm was demonstrated to the best of our knowledge. Experimentally, a dual-end diffusion-bonded YVO4–Nd:YVO4–YVO4 crystal was employed as the laser medium to generate 1.34 µm laser radiation, and an RTP crystal as the Raman medium to enable the frequency conversion, by which radiation at 1.49 µm was achieved successfully. With an incident pump power of 10.4 W, an average output power of 502 mW was obtained at a pulse repetition rate of 15 kHz, corresponding to a conversion efficiency of 4.8%.

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