Current-perpendicular-to-plane spin transport properties of CoFe alloys: Spin diffusion length and scattering asymmetry

2010 ◽  
Vol 108 (2) ◽  
pp. 023908 ◽  
Author(s):  
C. Ahn ◽  
K.-H. Shin ◽  
R. Loloee ◽  
J. Bass ◽  
W. P. Pratt
Keyword(s):  
Transport Properties ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Diffusion Length ◽  
Current Perpendicular To Plane

Room-temperature spin transport in InAs nanowire lateral spin valve

RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75736-75740 ◽  
Author(s):  
Zhicheng Wang ◽  
Dong Pan ◽  
Le Wang ◽  
Tingwen Wang ◽  
Bing Zhao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spintronic Devices ◽  
Spin Diffusion Length ◽  
Nanowire Device ◽  
Large Spin

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

2021 ◽  
Vol 129 (1) ◽  
pp. 013901
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
T. Shiihara ◽  
M. Ikawa ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Experimental Estimation ◽  
Spin Diffusion Length

scholarly journals Self-consistent determination of spin Hall angle and spin diffusion length in Pt and Pd: The role of the interface spin loss

2018 ◽  
Vol 4 (6) ◽  
pp. eaat1670 ◽  
Author(s):  
Xinde Tao ◽  
Qi Liu ◽  
Bingfeng Miao ◽  
Rui Yu ◽  
Zheng Feng ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Self Consistent ◽  
Hall Angle ◽  
Spin Diffusion Length

scholarly journals Long Spin Diffusion Length in Few-Layer Graphene Flakes

2016 ◽  
Vol 117 (14) ◽  
Author(s):  
W. Yan ◽  
L. C. Phillips ◽  
M. Barbone ◽  
S. J. Hämäläinen ◽  
A. Lombardo ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Spin Diffusion Length ◽  
Few Layer Graphene

Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film: Spin Current Termination

2012 ◽  
Vol 508 ◽  
pp. 266-270 ◽  
Author(s):  
K. Harii ◽  
Z. Qiu ◽  
T. Iwashita ◽  
Y. Kajiwara ◽  
K. Uchida ◽  
...  
Keyword(s):  
Diffusion Equation ◽  
Hall Effect ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Interlayer Thickness ◽  
Spin Pumping ◽  
Charge Current ◽  
Inverse Spin Hall Effect ◽  
Spin Diffusion Length

A Spin Current Generated by Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film Is Calculated Based on the Spin Pumping Theory and the Standard Spin Diffusion Equation. By Attaching the Spin-Sink Layer, the Injected Spin Current Is Drastically Enhanced when the Interlayer Thickness Is Shorter than the Spin Diffusion Length of the Interlayer. We Also Provided the Formula of the Charge Current which Is Induced from the Pumped Spin Current via the Inverse Spin-Hall Effect.

Energy-Efficient Multiferroic Spin-Devices and Spin-Circuits

SPIN ◽  
2020 ◽  
Vol 10 (04) ◽  
pp. 2030001
Author(s):  
Kuntal Roy
Keyword(s):  
Energy Efficient ◽  
Large Scale ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Logic Gates ◽  
Low Energy ◽  
Circuit Representation ◽  
Spin Diffusion Length ◽  
Spin Devices

Spin-devices are switched by flipping spins without moving charge in space and this can lead to ultra-low-energy switching replacing traditional transistors in beyond Moore’s law era. In particular, the electric field-induced magnetization switching has emerged to be an energy-efficient paradigm. Here, we review the recent developments on ultra-low-energy, area-efficient, and fast spin-devices using multiferroic magnetoelectric composites. It is shown that both digital logic gates and analog computing with transistor-like high-gain region in the input-output characteristics of multiferroic composites are feasible. We also review the equivalent spin-circuit representation of spin-devices by considering spin potential and spin current similar to the charge-based counterparts using Kirchhoff’s voltage/current laws, which is necessary for the development of large-scale circuits. We review the spin-circuit representation of spin pumping, which happens anyway when there is a material adjacent to a rotating magnetization and therefore it is particularly necessary to be incorporated in device modeling. Such representation is also useful for understanding and proposing experiments. In spin-circuit representation, spin diffusion length is an important parameter and it is shown that a thickness-dependent spin diffusion length reflecting Elliott–Yafet spin relaxation mechanism in platinum is necessary to match the experimental results.

Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry

2007 ◽  
Vol 90 (1) ◽  
pp. 012101 ◽  
Author(s):  
Charles E. Moreau ◽  
Ion C. Moraru ◽  
Norman O. Birge ◽  
William P. Pratt
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Diffusion Length
Sign in / Sign up

Export Citation Format

Share Document