Electronic structure and deep impurity levels in [111] GaAs/AlxGa1−xAs semiconductor superlattices

1989 ◽  
Vol 65 (5) ◽  
pp. 1987-1995 ◽  
Author(s):  
Shang Yuan Ren ◽  
John D. Dow
Keyword(s):  
Electronic Structure ◽  
Semiconductor Superlattices ◽  
Deep Impurity

scholarly journals Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two

2013 ◽  
Vol 88 (11) ◽  
Author(s):  
E. Kalesaki ◽  
W. H. Evers ◽  
G. Allan ◽  
D. Vanmaekelbergh ◽  
C. Delerue
Keyword(s):  
Electronic Structure ◽  
Semiconductor Superlattices

Deep impurity levels in semiconductor superlattices

1988 ◽  
Vol 38 (15) ◽  
pp. 10677-10692 ◽  
Author(s):  
Shang Yuan Ren ◽  
John D. Dow ◽  
Jun Shen
Keyword(s):  
Semiconductor Superlattices ◽  
Deep Impurity

scholarly journals Sn-doped CdS: A New Intermediate Band Material for Solar Cells

2021 ◽  
Author(s):  
Jianbo Yin ◽  
Xiaobin Yan ◽  
Min Zhu
Keyword(s):  
Electronic Structure ◽  
Optical Property ◽  
Band Structure ◽  
Impurity Level ◽  
Deep Impurity ◽  
Intermediate Band ◽  
Sn Doping ◽  
Calculation Results ◽  
Band Material ◽  
Deep Impurity Level

Abstract In this paper, the electronic structure and optical properties of CdS doped by Sn with different concentrations were investigated by first principles. The calculation results of electronic structure show that the doping of Sn can produce a deep impurity level band in the band structure of CdS. The calculation results of optical property show that Sn doping can increase the light absorption coefficient and conductivity of CdS. The overall calculation results show that Sn doping can produce stable intermediate band structure and significantly improve the optical property of CdS.

Sign in / Sign up

Export Citation Format

Share Document