Magnetoresistivity in a NiFeCo/Ta multilayer thin film with elevated substrate temperature

1988 ◽  
Vol 64 (10) ◽  
pp. 6113-6114
Author(s):  
J. H. Hur ◽  
C. S. Comstock ◽  
A. V. Pohm ◽  
L. A. Pearey
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Multilayer Thin Film

scholarly journals Selective normal mode excitation in multilayer thin film bulk acoustic wave resonators

2014 ◽  
Vol 105 (16) ◽  
pp. 162910 ◽  
Author(s):  
Andrey Kozyrev ◽  
Anatoly Mikhailov ◽  
Sergey Ptashnik ◽  
Peter K. Petrov ◽  
Neil Alford
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Normal Mode ◽  
Bulk Acoustic Wave ◽  
Multilayer Thin Film ◽  
Mode Excitation ◽  
Film Bulk ◽  
Acoustic Wave Resonators ◽  
Bulk Acoustic Wave Resonators

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

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