Deep levels inp‐type GaAs grown by metalorganic vapor phase epitaxy

1988 ◽  
Vol 64 (10) ◽  
pp. 4975-4986 ◽  
Author(s):  
P. J. Wang ◽  
T. F. Kuech ◽  
M. A. Tischler ◽  
P. Mooney ◽  
G. Scilla ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Deep Levels

Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 398-403 ◽  
Author(s):  
Toshio Kawahara ◽  
Yasuhiro Ohbuchi ◽  
Norikazu Tabuchi ◽  
Jun Morimoto ◽  
Hideo Goto ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Deep Levels

Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping

1995 ◽  
Vol 378 ◽  
Author(s):  
J. W. Huang ◽  
T. F. Kuech
Keyword(s):  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Valence Band ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Oxygen Doping ◽  
Constant Energy ◽  
Indium Gallium

AbstractIntentional defect incorporation in metalorganic vapor phase epitaxy (MOVPE) InxGai-xAs was achieved by controlled oxygen doping using diethylaluminum ethoxide (DEALO). DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGai-xAs:Si with 0≤x≤ 0.25. DLTS analysis on a series of InxGa1-xAs:Si:O samples with 0≤x≤ 0.18 showed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. The characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band.

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping
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