Low‐temperature homoepitaxial film growth of Si by reactive ion beam deposition

1988 ◽  
Vol 64 (2) ◽  
pp. 702-707 ◽  
Author(s):  
Hiroshi Yamada ◽  
Yasuhiro Torii
Keyword(s):  
Low Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Homoepitaxial Film ◽  
Beam Deposition

Low‐temperature film growth of Si by reactive ion beam deposition

1987 ◽  
Vol 50 (7) ◽  
pp. 386-388 ◽  
Author(s):  
Hiroshi Yamada ◽  
Yasuhiro Torii
Keyword(s):  
Low Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition

1977 ◽  
Vol 16 (2) ◽  
pp. 245-251 ◽  
Author(s):  
Kunihiro Yagi ◽  
Shozo Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Silicon Film ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Low‐temperature epitaxy of Si and Ge by direct ion beam deposition

1987 ◽  
Vol 5 (4) ◽  
pp. 2135-2139 ◽  
Author(s):  
R. A. Zuhr ◽  
B. R. Appleton ◽  
N. Herbots ◽  
B. C. Larson ◽  
T. S. Noggle ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Low Temperature Epitaxy ◽  
Beam Deposition
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