Optimum growth condition of single‐crystalline undoped ZnS grown by the molecular‐beam‐epitaxial method using a H2S gas source

1988 ◽  
Vol 64 (8) ◽  
pp. 3945-3948 ◽  
Author(s):  
Shigeo Kaneda ◽  
Takefumi Shimoguchi ◽  
Hironobu Takahashi ◽  
Shin‐ici Motoyama ◽  
Fumihisa Kano ◽  
...  
Keyword(s):  
Growth Condition ◽  
Molecular Beam ◽  
Optimum Growth ◽  
Single Crystalline ◽  
Molecular Beam Epitaxial ◽  
Gas Source ◽  
Optimum Growth Condition

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

2014 ◽  
Vol 7 (12) ◽  
pp. 125502 ◽  
Author(s):  
Yuya Matsubara ◽  
Kei S. Takahashi ◽  
Yoshinori Tokura ◽  
Masashi Kawasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source

Gas Source Silicon Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
H. Hirayama ◽  
M. Hiroi ◽  
K. Koyama ◽  
T. Tatsumi ◽  
M. Sato
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Molecular Beam ◽  
Hydrogen Desorption ◽  
Dissociative Adsorption ◽  
Molecular Beam Epitaxial ◽  
Gas Source ◽  
Surface Migration ◽  
Micron Size ◽  
Silicon Hydrides

ABSTRACTGas source silicon molecular beam epitaxial (Si-MBE) growth is microscopically governed by a disociative adsorption of silicon hydrides, such as Si2H6 source gas molecules on Si surface. The dissociative adsorption generates SiH species on the surface. From this hydride phase, hydrogen desorbs thermaly. The temperature dependence of the growth rate indicated that the hydrogen desorption from the SiH is the rate limiting step. In HBO2 Knudsen cell doping, B adsorbates block the surface migration. Such a blocking effect can be avoided by B2H6 gas dopant, because of the similar incorpration mechanism of B2H6 to that of Si2H6. However, in PH3 gas doping, a crystal quality degradation was observed at a high doping range due to the preferentially high sticking coefficient of PH3 and the resulting surface dangling bond termination. The selective epitaxial growth of a B doped layer using Si2H6 and B2H6 was applied to a novel structured base fabrication for super self-aligned selectively grown base transistor (SSSBT). A successful achievement of the SSSBT fabrication indicates the high potentiality of gas source Si-MBE to the sub-micron size ultra-high speed bipolar large scale integrated (LSI) circuits.

Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn andH2Se

1994 ◽  
Vol 33 (Part 1, No. 6A) ◽  
pp. 3505-3509 ◽  
Author(s):  
Masayuki Imaizumi ◽  
Yasuyuki Endoh ◽  
Ken-ichi Ohtsuka ◽  
Toshiro Isu
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gas Source ◽  
Molecular Beam Epitaxial Growth

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 60 (7) ◽  
pp. 824-826 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Iwao Izumikawa ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source ◽  
Lattice Matched

The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane

2000 ◽  
Vol 470 (1-2) ◽  
pp. 131-140 ◽  
Author(s):  
Y.-J. Zheng ◽  
J.R. Engstrom ◽  
J. Zhang ◽  
A. Schellinger ◽  
B.A. Joyce
Keyword(s):  
Epitaxial Growth ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gas Source ◽  
Molecular Beam Epitaxial Growth
Sign in / Sign up

Export Citation Format

Share Document