The effects of the glass substrate on the properties of rf glow discharge amorphous Si:H thin films

1988 ◽  
Vol 63 (7) ◽  
pp. 2443-2445 ◽  
Author(s):  
Y.C. Koo ◽  
R. Perrin ◽  
K. T. Aust ◽  
S. Zukotynski ◽  
R. V. Kruzelecky
1997 ◽  
Vol 467 ◽  
Author(s):  
W. Futako ◽  
K. Fukutani ◽  
I. Shimizu

ABSTRACTSilicon thin films were prepared by “Chemical Annealing” where the deposition of thin layer (<3 nm thick) by RF glow discharge of SiH4 and the treatment with hydrogen atoms (H) or triplet state of argon (3Ar) were repeated alternatating. Consequently, wide gap a-Si:H with the gap of 2.1 eV was made by H-treatmentat rather low substrate temperature (Ts<150 °C), while a-Si:H with the gap narrower than 1.6 eV was obtained by the treatment with 3Ar at high Ts (>300 °C), resulting from the release of excessive hydrogen. Both the wider or the narrower gap films exhibited low defect density lower than 1016 cm−3 and obvious improvements in the stability for light soaking.


1993 ◽  
Vol 32 (Part 1, No. 9A) ◽  
pp. 3729-3733 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka

1991 ◽  
Vol 69 (2) ◽  
pp. 632-638 ◽  
Author(s):  
A. Lloret ◽  
E. Bertran ◽  
J. L. Andujar ◽  
A. Canillas ◽  
J. L. Morenza

2006 ◽  
Vol 31 (2) ◽  
pp. 132-135 ◽  
Author(s):  
J. Ebothé ◽  
K.J. Plucinski ◽  
P. Roca i Cabarrocas ◽  
I.V. Kityk

Author(s):  
J. H. Dias da Silva ◽  
M. P. Cantão ◽  
J. I. Cisneros ◽  
C. S. Lambert ◽  
M. A. Bica de Moraes ◽  
...  

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