Secondary ion mass spectrometry sensitivity factors versus ionization potential and electron affinity for many elements in HgCdTe and CdTe using oxygen and cesium ion beams

1988 ◽  
Vol 63 (10) ◽  
pp. 5121-5125 ◽  
Author(s):  
R. G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beams ◽  
Cesium Ion ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

scholarly journals New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications

2007 ◽  
Vol 78 (8) ◽  
pp. 085101 ◽  
Author(s):  
S. F. Belykh ◽  
V. V. Palitsin ◽  
I. V. Veryovkin ◽  
A. P. Kovarsky ◽  
R. J. H. Chang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beams ◽  
Ion Source ◽  
Ion Mass Spectrometry ◽  
Secondary Ion
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