Distributed Bragg reflector Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers with a broad single‐mode tuning range

1988 ◽  
Vol 63 (11) ◽  
pp. 5603-5606 ◽  
Author(s):  
Y. Shani ◽  
R. Rosman ◽  
A. Katzir ◽  
P. Norton ◽  
M. Tacke ◽  
...  
Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 84
Author(s):  
Daibing Zhou ◽  
Yiming He ◽  
Dan Lu ◽  
Song Liang ◽  
Lingjuan Zhao ◽  
...  

With the deployment of the fifth generation of mobile networks (5G), 25 and 100 Gb/s directly modulated lasers and modules will become the mainstream optical transmitters. A directly modulated InGaAlAs/InP distributed Bragg reflector (DBR) laser is fabricated by butt-joint technology. A 25 Gb/s data transmission over a single-mode fiber of up to 10 km is demonstrated, and a wavelength tuning range of 14.28 nm is achieved through injection current tuning of a DBR section and temperature control of a thermoelectric cooler (TEC), which is the best candidate of colorless light sources for wavelength-division-multiplexed passive optical network (WDM-PON) systems.


2000 ◽  
Vol 17 (2) ◽  
pp. 109-111 ◽  
Author(s):  
Yi-Yuan Xue ◽  
Hong-Lin An ◽  
Li-Bin Fu ◽  
Xiang-Zhi Lin ◽  
Hong-Du Liu

Nanoscale ◽  
2021 ◽  
Vol 13 (37) ◽  
pp. 15830-15836
Author(s):  
Ahmad Syazwan Ahmad Kamal ◽  
Cheng-Chieh Lin ◽  
Di Xing ◽  
Yang-Chun Lee ◽  
Zhiyu Wang ◽  
...  

A newly developed lithographic in-mold patterning process is proposed to fabricate on-chip single-mode distributed-Bragg-reflector waveguide small lasers that utilized CsPbBr3 perovskite nanocrystals as the gain material.


1992 ◽  
Vol 61 (20) ◽  
pp. 2389-2391 ◽  
Author(s):  
Kenneth M. Dzurko ◽  
Donald R. Scifres ◽  
Amos Hardy ◽  
David F. Welch ◽  
R. G. Waarts

2012 ◽  
Vol 20 (4) ◽  
pp. 3890 ◽  
Author(s):  
Peter Fuchs ◽  
Jochen Friedl ◽  
Sven Höfling ◽  
Johannes Koeth ◽  
Alfred Forchel ◽  
...  

Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.


2011 ◽  
Author(s):  
C. Fiebig ◽  
S. Pekarek ◽  
K. Paschke ◽  
M. Uebernickel ◽  
T. Südmeyer ◽  
...  

2015 ◽  
Vol 15 (10) ◽  
pp. 7462-7466
Author(s):  
Su Hwan Oh ◽  
Ki-Hong Yoon ◽  
Seung-Hyun Cho ◽  
Jun-Kyu Seo

We report the transmission capability of a tunable external cavity laser (T-ECL) that utilizes a super-luminescent diode (SLD) and a polymer Bragg reflector (PBR) operating with a direct modulation of 2.5 Gb/s for a light source of a long-reach wavelength division multiplexed-passive optical network (WDM-PON). The T-ECL successfully operated at an ambient temperature of −20 °C to 70 °C when employing a cooled SLD. A tuning range of 12-nm is achieved with a tuning power of lower than 80 mW. A side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. The linewidth of the lasing spectrum is less than 0.1 nm at 20 dB from the peak power. The transmission performance of the T-ECL, including an optical bandpass filter (OBPF), is better than that of the T-ECL excluding an OBPF for a long-reach transmission over 80 km of single mode fiber (SMF). The power penalty of the T-ECL is less than 1.4 dB when using an OBPF for an 80-km transmission.


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