Free‐carrier density determination inp‐type GaAs using Raman scattering from coupled plasmon‐phonon modes

1988 ◽  
Vol 63 (11) ◽  
pp. 5598-5600 ◽  
Author(s):  
Kam Wan ◽  
Jeff F. Young ◽  
R. L. S. Devine ◽  
W. T. Moore ◽  
A. J. SpringThorpe ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Carrier Density ◽  
Free Carrier ◽  
Phonon Modes ◽  
Density Determination ◽  
Free Carrier Density

Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations

2008 ◽  
Vol 600-603 ◽  
pp. 1293-1296
Author(s):  
T. Kitamura ◽  
Shinichi Nakashima ◽  
Hajime Okumura
Keyword(s):  
Raman Scattering ◽  
Shape Analysis ◽  
Line Shape ◽  
Carrier Density ◽  
Free Carrier ◽  
Raman Scattering Spectroscopy ◽  
Line Shape Analysis ◽  
Free Carrier Density ◽  
Low Dislocation Density ◽  
Shallow Impurity

We characterized the HVPE grown freestanding GaN crystals with various shallow impurity concentrations by Raman scattering spectroscopy. Electrical properties such as free carrier density were examined for the GaN crystals through Raman measurements of the A1 LO-phonon plasmon coupled (LOPC) mode and its line shape analysis. The asymmetric broadening and the up-shift of the LOPC band were clearly observed as the carrier density increased from 1017 to 1019 cm-3. The line shape analysis revealed that the carrier density in the GaN crystals can be simply estimated from measured frequency shift of LOPC mode. The variations of the width for TO phonon bands were also observed in this carrier density range. The band widths were slightly increased by 0.2 cm-1 as the impurity concentration increased from 1018 to 1019 cm-3 in samples with low dislocation density.

Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

2008 ◽  
Vol 93 (12) ◽  
pp. 121913 ◽  
Author(s):  
S. Nakashima ◽  
T. Kitamura ◽  
T. Kato ◽  
K. Kojima ◽  
R. Kosugi ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Carrier Density ◽  
Free Carrier ◽  
Free Carrier Density

Magnetic Coupling in La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 Trilayers

2009 ◽  
Vol 289-292 ◽  
pp. 303-309
Author(s):  
N.M. Nemes ◽  
C. Visani ◽  
J. Garcia-Barriocanal ◽  
F.Y. Bruno ◽  
Z. Sefrioui ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Temperature ◽  
Carrier Density ◽  
High Temperature Superconductor ◽  
Hysteresis Loops ◽  
Magnetic Coupling ◽  
Oxygen Depletion ◽  
Free Carrier ◽  
Half Metallic ◽  
Free Carrier Density

We report on the interplay between ferromagnetism and superconductivity in trilayers La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 made of half metallic manganite and high temperature superconductor cuprate. Samples with a fully oxygenated cuprate show a magnetic field interval where the magnetizations of the manganite are aligned antiparallel. A considerable magnetoresistance accompanies the switching between magnetization configurations (parallel vs. antiparallel) of the manganite moments. Suppression of the free carrier density of the cuprate which occurs upon oxygen depletion, results in deep modifications in the shape of the normal state hysteresis loops indicating that there may be a magnetic coupling mediated by free carrier density of the cuprate. This result outlines the importance of quasiparticle transmission in the interplay between ferromagnetism and superconductivity in this kind of samples.

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

2010 ◽  
Vol 645-648 ◽  
pp. 255-258 ◽  
Author(s):  
Nicolò Piluso ◽  
Andrea Severino ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Gas Flow ◽  
Strong Relationship ◽  
Free Carrier ◽  
Silicon Substrates ◽  
Accurate Analysis ◽  
Si Substrates ◽  
Free Carrier Density ◽  
Longitudinal Optic Phonon

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.

Thermographic imaging of free carrier density in silicon for solar cells

2004 ◽  
Vol 1 (1) ◽  
pp. 89-98
Author(s):  
Martin C. Schubert ◽  
Jörg Isenberg ◽  
Stephan Riepe ◽  
Wilhelm Warta
Keyword(s):  
Solar Cells ◽  
Carrier Density ◽  
Free Carrier ◽  
Free Carrier Density ◽  
Thermographic Imaging

Determining the Free Carrier Density in Cd x Hg1–xTe Solid Solutions from Far-Infrared Reflection Spectra

2017 ◽  
Vol 51 (13) ◽  
pp. 1732-1736
Author(s):  
A. G. Belov ◽  
I. A. Denisov ◽  
V. E. Kanevskii ◽  
N. V. Pashkova ◽  
A. P. Lysenko
Keyword(s):  
Solid Solutions ◽  
Carrier Density ◽  
Far Infrared ◽  
Free Carrier ◽  
Reflection Spectra ◽  
Free Carrier Density ◽  
Infrared Reflection

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

2021 ◽  
Vol 60 (SB) ◽  
pp. SBBD08
Author(s):  
Shogo Sekine ◽  
Masakazu Okada ◽  
Teruaki Kumazawa ◽  
Mitsuru Sometani ◽  
Hirohisa Hirai ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Carrier Density ◽  
Free Carrier ◽  
Free Carrier Density ◽  
Density Enhancement
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