Relationship between layer thickness uniformity and statistical device property distribution over a wafer grown by molecular‐beam epitaxy

1988 ◽  
Vol 63 (9) ◽  
pp. 4728-4733 ◽  
Author(s):  
Stefan P. Svensson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Property Distribution ◽  
Thickness Uniformity ◽  
Device Property

HCP-FCC Transition in Epitaxial Co-Cu Superlattices

1989 ◽  
Vol 151 ◽  
Author(s):  
F. J. Lamelas ◽  
C. H. Lee ◽  
Hui He ◽  
W. Vavra ◽  
Roy Clarke
Keyword(s):  
Molecular Beam Epitaxy ◽  
Magnetic Anisotropy ◽  
Detailed Analysis ◽  
Layer Thickness ◽  
Strong Correlation ◽  
Diffuse Scattering ◽  
Molecular Beam ◽  
Easy Axis ◽  
Structural Symmetry ◽  
X Ray

ABSTRACTA series of epitaxial Co-Cu superlattices has been grown on GaAs (110) substrates by molecular beam epitaxy. Detailed analysis of x-ray diffuse scattering scans along Co (101ℓ) reveals a crossover from from the bulk hcp phase of Co to metastable fcc stacking. Our measurements indicate a strong correlation between structural symmetry and the magnetic anisotropy in Co - noble metal superlattices. In particular, the perpendicular easy axis of magnetization onsets at Co layer thickness ♣ 19 Å in Cohcp-Au compared to only ˜11 Å in Cofcc-Cu.

Measurement of the layer thickness on rotating substrates in molecular-beam epitaxy apparatus

2009 ◽  
Vol 54 (7) ◽  
pp. 1066-1069
Author(s):  
S. E. Aleksandrov ◽  
G. A. Gavrilov ◽  
G. Yu. Sotnikova ◽  
A. N. Alekseev ◽  
D. A. Baranov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Molecular Beam

Epitaxial Co-Cu Superlattices

1991 ◽  
Vol 231 ◽  
Author(s):  
Elizabeth Schuler ◽  
Sezai Elagoz ◽  
William Vavra ◽  
Frank Lamelas ◽  
Hui David He ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Antiferromagnetic Coupling ◽  
Competing Interactions ◽  
X Ray ◽  
X Ray Scattering ◽  
Complex Spin

AbstractWe describe measurements on the magnetic properties of Co-Cu superlattices in which the Co layer thickness was fixed at 20 Å and the Cu thickness was varied from 4 Å to 24 Å. The samples were grown on Ge-buffered (110) GaAs by molecular beam epitaxy. X-ray scattering and in-situ RHEED indicate that the multilayers are oriented in the (111) direction with the Co layers stacked in an fcc arrangement. Our interest in this series of samples lies in their unusual hysteresis curves which show distinct transitions. We have found that the appearance of these transitions is directly related to the Cu thickness, indicating the presence of complex spin configurations as a consequence of competing interactions. The results are not consistent with a simple RKKY antiferromagnetic coupling.

Accurate Measurement of Layer Thickness Using Optical Reflective Spectra of Bragg Mirrors Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 1, No. 10) ◽  
pp. 4436-4439
Author(s):  
Takashi Toyoda ◽  
Kazumasa Mitsunaga ◽  
Jun Ohta ◽  
Kazuo Kyuma
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Molecular Beam

Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

2002 ◽  
Vol 92 (11) ◽  
pp. 6880-6885 ◽  
Author(s):  
S. W. Lee ◽  
H. C. Chen ◽  
L. J. Chen ◽  
Y. H. Peng ◽  
C. H. Kuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Buffer Layer Thickness

Optical in situ measurements of temperature and layer thickness in Si molecular beam epitaxy

1996 ◽  
Vol 169 (4) ◽  
pp. 681-688 ◽  
Author(s):  
Myeongcheol Kim ◽  
H.J. Thieme ◽  
G. Lippert ◽  
H.J. Osten
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Molecular Beam ◽  
In Situ Measurements
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