Persistent photoconductivity from thin layer amorphous silicon doping modulated superlattices

1988 ◽  
Vol 63 (5) ◽  
pp. 1591-1596 ◽  
Author(s):  
D. H. Zhang ◽  
D. Haneman
Keyword(s):  
Thin Layer ◽  
Amorphous Silicon ◽  
Persistent Photoconductivity ◽  
Silicon Doping

A Novel Amorphous Silicon Doping Superlattice Device with a Controllable Gate

1994 ◽  
Vol 33 (Part 2, No. 4A) ◽  
pp. L497-L499
Author(s):  
Ching-Ru Liu ◽  
Yean-Kuen Fang ◽  
Kuin-Hui Chen ◽  
Jun-Dar Hwang
Keyword(s):  
Amorphous Silicon ◽  
Silicon Doping

Solar-to-Hydrogen Efficiency of 9.5 % by using a Thin-Layer Platinum Catalyst and Commercial Amorphous Silicon Solar Cells

ChemCatChem ◽  
2016 ◽  
Vol 8 (9) ◽  
pp. 1713-1717 ◽  
Author(s):  
Qiang Ma ◽  
Man Li ◽  
Liuqing Pang ◽  
Xianpei Ren ◽  
Can Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thin Layer ◽  
Amorphous Silicon ◽  
Platinum Catalyst ◽  
Silicon Solar Cells

Absorption in amorphous silicon doping-modulated multilayers

1987 ◽  
Vol 97-98 ◽  
pp. 927-930 ◽  
Author(s):  
R. Durny ◽  
S. Ducharme ◽  
J. Viner ◽  
P.C. Taylor ◽  
D. Haneman
Keyword(s):  
Amorphous Silicon ◽  
Silicon Doping ◽  
Modulated Multilayers

Persistent photoconductivity of InP nanowire photoconductors bridged between amorphous silicon electrodes

2007 ◽  
Author(s):  
Ataur Sarkar ◽  
Logeeswaran V. J. ◽  
Nobuhiko P. Kobayashi ◽  
Joseph Straznicky ◽  
Shih-Yuan Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Persistent Photoconductivity

Defect formation in amorphous silicon doping superlattice films

1987 ◽  
Vol 97-98 ◽  
pp. 875-878 ◽  
Author(s):  
J.David Cohen ◽  
John M. Essick ◽  
Carol E. Michelson ◽  
James P. Harbison
Keyword(s):  
Amorphous Silicon ◽  
Defect Formation ◽  
Silicon Doping

A Study on the Characteristics of the Polycrystalline Silicon Annealed by the SHG Nd:YAG Laser

2011 ◽  
Vol 695 ◽  
pp. 9-12
Author(s):  
Young Chul Kim ◽  
Dae Wook Kim ◽  
Ho Seob Kim ◽  
Seong Joon Ahn ◽  
Seung Joon Ahn
Keyword(s):  
Grain Size ◽  
Thin Layer ◽  
Amorphous Silicon ◽  
Harmonic Generation ◽  
Nd:Yag Laser ◽  
Polycrystalline Silicon ◽  
Second Harmonic ◽  
Laser Pulses ◽  
Absorption Efficiency ◽  
Optical Energy

We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm2, we could obtain the micro-crystalline structure with grain size as large as 500 nm.

Sign in / Sign up

Export Citation Format

Share Document