Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism

2010 ◽  
Vol 107 (9) ◽  
pp. 093701 ◽  
Author(s):  
Y. C. Yang ◽  
C. Chen ◽  
F. Zeng ◽  
F. Pan
Keyword(s):  
Resistance Switching

scholarly journals Ratio-based multi-level resistive memory cells

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Miguel Angel Lastras-Montaño ◽  
Osvaldo Del Pozo-Zamudio ◽  
Lev Glebsky ◽  
Meiran Zhao ◽  
Huaqiang Wu ◽  
...  
Keyword(s):  
Error Probability ◽  
Resistance Switching ◽  
Closed Form Expression ◽  
Memory Cells ◽  
Resistive Memory ◽  
Worst Case ◽  
Information Encoding ◽  
Bit Error Probability ◽  
Multi Level ◽  
Switching Devices

AbstractRatio-based encoding has recently been proposed for single-level resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e. resistance-based encoding), is used for encoding single-bit information, which significantly reduces the bit error probability. Generalizing this concept for multi-level cells, we propose a ratio-based information encoding mechanism and demonstrate its advantages over the resistance-based encoding for designing multi-level memory systems. We derive a closed-form expression for the bit error probability of ratio-based and resistance-based encodings as a function of the number of levels of the memory cell, the variance of the distribution of the resistive states, and the ON/OFF ratio of the resistive device, from which we prove that for a multi-level memory system using resistance-based encoding with bit error probability x, its corresponding bit error probability using ratio-based encoding will be reduced to $$x^2$$ x 2 at the best case and $$x^{\sqrt{2}}$$ x 2 at the worst case. We experimentally validated these findings on multiple resistance-switching devices and show that, compared to the resistance-based encoding on the same resistive devices, our approach achieves up to 3 orders of magnitude lower bit error probability, or alternatively it could reduce the cell’s programming time and programming energy by up 5–10$$\times$$ × , while achieving the same bit error probability.

scholarly journals Ferroelectric Switching: Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low‐Power Neuromorphic In‐Memory Computing (Adv. Mater. 21/2021)

2021 ◽  
Vol 33 (21) ◽  
pp. 2170167
Author(s):  
Fei Xue ◽  
Xin He ◽  
Zhenyu Wang ◽  
José Ramón Durán Retamal ◽  
Zheng Chai ◽  
...  
Keyword(s):  
Low Power ◽  
Resistance Switching ◽  
Ferroelectric Switching

Resistance switching memory in perovskite oxides

2015 ◽  
Vol 358 ◽  
pp. 206-224 ◽  
Author(s):  
Z.B. Yan ◽  
J.-M. Liu
Keyword(s):  
Perovskite Oxides ◽  
Resistance Switching ◽  
Switching Memory

Copper Nanofilament Formation during Unipolar Resistance Switching of Electrodeposited Cuprous Oxide

2015 ◽  
Vol 27 (17) ◽  
pp. 5974-5981 ◽  
Author(s):  
Sanaz Yazdanparast ◽  
Jakub A. Koza ◽  
Jay A. Switzer
Keyword(s):  
Cuprous Oxide ◽  
Resistance Switching

First-principles modeling of resistance switching in perovskite oxide material

2006 ◽  
Vol 89 (4) ◽  
pp. 042904 ◽  
Author(s):  
Sang Ho Jeon ◽  
Bae Ho Park ◽  
Jaichan Lee ◽  
Bora Lee ◽  
Seungwu Han
Keyword(s):  
First Principles ◽  
Resistance Switching ◽  
Perovskite Oxide ◽  
Oxide Material

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Enhanced resistance switching in ultrathin Ag/SrTiO3/(La,Sr)MnO3 memristors and their long-term plasticity for neuromorphic computing

2021 ◽  
Vol 119 (2) ◽  
pp. 023502
Author(s):  
Haihua Hu ◽  
Yuke Li ◽  
Yihao Yang ◽  
Wenxin Lv ◽  
Han Yu ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Neuromorphic Computing ◽  
Enhanced Resistance

scholarly journals Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

2009 ◽  
Vol 102 (2) ◽  
Author(s):  
S. H. Chang ◽  
J. S. Lee ◽  
S. C. Chae ◽  
S. B. Lee ◽  
C. Liu ◽  
...  
Keyword(s):  
Resistance Switching
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