AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition

Daniel C. Bertolet; Jung‐Kuei Hsu; Kei May Lau

doi:10.1063/1.339170

AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.339170 ◽

1987 ◽

Vol 62 (1) ◽

pp. 120-125 ◽

Cited By ~ 31

Author(s):

Daniel C. Bertolet ◽

Jung‐Kuei Hsu ◽

Kei May Lau

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Chemical Vapor ◽

Carrier Confinement ◽

High Carrier ◽

Organometallic Chemical Vapor Deposition

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Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02653323 ◽

1991 ◽

Vol 20 (2) ◽

pp. 197-201 ◽

Cited By ~ 5

Author(s):

Daniel C. Bertolet ◽

Jung-Kuei Hsu ◽

Kei May Lau ◽

Emil S. Koteles

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Growth Interruption ◽

Organometallic Chemical Vapor Deposition

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Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.99497 ◽

1988 ◽

Vol 52 (4) ◽

pp. 293-295 ◽

Cited By ~ 31

Author(s):

Daniel C. Bertolet ◽

Jung‐Kuei Hsu ◽

Stephen H. Jones ◽

Kei May Lau

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Single Quantum ◽

Organometallic Chemical Vapor Deposition

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Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.100224 ◽

1988 ◽

Vol 53 (25) ◽

pp. 2501-2503 ◽

Cited By ~ 27

Author(s):

Daniel C. Bertolet ◽

Jung‐Kuei Hsu ◽

Kei May Lau

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Single Quantum ◽

Organometallic Chemical Vapor Deposition

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Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02652923 ◽

1990 ◽

Vol 19 (9) ◽

pp. 967-974 ◽

Cited By ~ 11

Author(s):

Daniel C. Bertolet ◽

Jung-Kuei Hsu ◽

Farid Agahi ◽

Kei May Lau

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Critical Thickness ◽

Chemical Vapor ◽

Strained Quantum Wells ◽

Organometallic Chemical Vapor Deposition

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Structure and formation mechanisms of AlGaAs V‐groove vertical quantum wells grown by low pressure organometallic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.117686 ◽

1996 ◽

Vol 69 (18) ◽

pp. 2710-2712 ◽

Cited By ~ 35

Author(s):

G. Biasiol ◽

F. Reinhardt ◽

A. Gustafsson ◽

E. Martinet ◽

E. Kapon

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Formation Mechanisms ◽

Organometallic Chemical Vapor Deposition

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Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00574-0 ◽

1998 ◽

Vol 195 (1-4) ◽

pp. 427-437 ◽

Cited By ~ 68

Author(s):

R Bhat ◽

C Caneau ◽

Lourdes Salamanca-Riba ◽

W Bi ◽

C Tu

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Organometallic Chemical Vapor Deposition

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Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.351255 ◽

1992 ◽

Vol 71 (3) ◽

pp. 1368-1372 ◽

Cited By ~ 13

Author(s):

Y. K. Su ◽

F. S. Juang ◽

C. H. Su

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical

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Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3 µm Range Lasers

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.5262 ◽

2004 ◽

Vol 43 (8A) ◽

pp. 5262-5268 ◽

Cited By ~ 4

Author(s):

Masao Kawaguchi ◽

Tomoyuki Miyamoto ◽

Fumio Koyama

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Threshold ◽

Photoluminescence Efficiency ◽

Metalorganic Chemical

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Self-ordering and confinement in strained InGaAs/AlGaAs V-groove quantum wires grown by low-pressure organometallic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.120850 ◽

1998 ◽

Vol 72 (6) ◽

pp. 701-703 ◽

Cited By ~ 28

Author(s):

E. Martinet ◽

F. Reinhardt ◽

A. Gustafsson ◽

G. Biasiol ◽

E. Kapon

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Wires ◽

Chemical Vapor ◽

Low Pressure ◽

Organometallic Chemical Vapor Deposition

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Organometallic Chemical Vapor Deposition of Superconducting YBaCuO Films and Post-Deposition Processing

Science and Technology of Thin Film Superconductors ◽

10.1007/978-1-4684-5658-5_35 ◽

1989 ◽

pp. 295-299 ◽

Cited By ~ 2

Author(s):

J. Zhao ◽

H. O. Marcy ◽

L. M. Tonge ◽

B. W. Wessels ◽

T. J. Marks ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Post Deposition ◽

Organometallic Chemical Vapor Deposition

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