Electro‐optic effect in semiconductor superlattices

1987 ◽  
Vol 62 (11) ◽  
pp. 4533-4537 ◽  
Author(s):  
Yia‐Chung Chang ◽  
J. N. Schulman ◽  
U. Efron
Keyword(s):  
Semiconductor Superlattices ◽  
Electro Optic

Systematic observation of electro-optic effects in semiconductor superlattices

1991 ◽  
Vol 9 (1-3) ◽  
pp. 289-292 ◽  
Author(s):  
D. Campi ◽  
C. Cacciatore ◽  
C. Coriasso ◽  
C. Alibert ◽  
A. Regreny
Keyword(s):  
Systematic Observation ◽  
Semiconductor Superlattices ◽  
Electro Optic

Electro-optic investigation of the Coherent Hall Effect in semiconductor superlattices

2005 ◽  
Vol 242 (6) ◽  
pp. 1175-1178 ◽  
Author(s):  
Anne Beate Hummel ◽  
Claudia Blöser ◽  
Tobias Bauer ◽  
Hartmut G. Roskos ◽  
Yuriy A. Kosevich ◽  
...  
Keyword(s):  
Hall Effect ◽  
Semiconductor Superlattices ◽  
Electro Optic

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti
Keyword(s):  
Free Convection ◽  
Temperature Measurement ◽  
Electro Optic

RAMAN PROBING OF PHONONS AND INTERFACES IN SEMICONDUCTOR SUPERLATTICES

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-131-C5-137 ◽  
Author(s):  
M. V. Klein ◽  
C. Colvard ◽  
R. Fischer ◽  
H . Morkoç
Keyword(s):  
Semiconductor Superlattices

EXPERIMENTAL INVESTIGATIONS OF THE QUANTUM PHOTOVOLTAIC EFFECT IN InAs-GaSb SEMICONDUCTOR SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-183-C5-186
Author(s):  
J. BLEUSE ◽  
P. VOISIN ◽  
M. VOOS ◽  
L. L. CHANG ◽  
L. ESAKI
Keyword(s):  
Photovoltaic Effect ◽  
Experimental Investigations ◽  
Semiconductor Superlattices
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