Liquid‐phase‐epitaxial InAsySb1−yon GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid‐IR photodiodes
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1982 ◽
Vol 43
(C5)
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pp. C5-3-C5-10
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1978 ◽
Vol 17
(2)
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pp. 299-304
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1972 ◽
Vol 1
(4)
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pp. 437-457
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1997 ◽
Vol 36
(Part 1, No. 2)
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pp. 738-742
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1984 ◽
Vol 70
(1-2)
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pp. 162-168
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