Probing the relationship between structural and optical properties of Si-doped AlN

2010 ◽  
Vol 96 (13) ◽  
pp. 131906 ◽  
Author(s):  
B. N. Pantha ◽  
A. Sedhain ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Si Doped ◽  
The Relationship

scholarly journals Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

Materials ◽  
2017 ◽  
Vol 10 (1) ◽  
pp. 24 ◽  
Author(s):  
Honglong Ning ◽  
Xianzhe Liu ◽  
Hongke Zhang ◽  
Zhiqiang Fang ◽  
Wei Cai ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Intrinsic Stress ◽  
Sno2 Thin Film ◽  
Structural And Optical Properties ◽  
Si Doped ◽  
Amorphous Si

Polyimide Electronic Structural and Optical Properties from First Principles Calculations

2011 ◽  
Vol 694 ◽  
pp. 597-601
Author(s):  
Jia Qi Lin ◽  
Jing Leng ◽  
Ming Hui Xia ◽  
Jun Hui Shi ◽  
Qing Guo Chi
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Band Gap ◽  
First Principles ◽  
Energy Band ◽  
Spectral Characteristics ◽  
Energy Band Structure ◽  
First Principles Calculations ◽  
Structural And Optical Properties ◽  
The Relationship

The electronic structural and optical properties of Polyimide (PI) are studied by first principle method of density theory. It is shown that molecules orbit contribution of PI is derived from carbon 2p orbital and oxygen 2p orbital, respectively,and the band gap from the energy band structure is much smaller than that of the experimental value. It is also found that the band gap calculated from the absorption edge of absorption spectra is in agreement with the result of the energy band structure. Furthermore, the relationship between the formation of dielectric function peaks and other spectral characteristics is interpreted.

Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

2007 ◽  
Vol 4 (7) ◽  
pp. 2494-2497
Author(s):  
Da-Bing Li ◽  
Takuya Katsuno ◽  
Masakazu Aoki ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties ◽  
Si Doped

Structural and Optical Properties of Si-Doped Ag Clusters

2014 ◽  
Vol 118 (9) ◽  
pp. 4885-4889 ◽  
Author(s):  
Junais Habeeb Mokkath ◽  
Udo Schwingenschlögl
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Ag Clusters ◽  
Si Doped

scholarly journals Structural and optical properties of Si-doped GaN

2000 ◽  
Vol 61 (4) ◽  
pp. 2812-2818 ◽  
Author(s):  
A. Cremades ◽  
L. Görgens ◽  
O. Ambacher ◽  
M. Stutzmann ◽  
F. Scholz
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Si Doped

scholarly journals Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

2021 ◽  
Vol 11 (18) ◽  
pp. 8639
Author(s):  
Zhiwei Li ◽  
Yugang Zeng ◽  
Yue Song ◽  
Jianwei Zhang ◽  
Yinli Zhou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Lattice Relaxation ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Peak Energy ◽  
Metal Organic ◽  
The Relationship

InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

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