Extended step‐by‐step analysis in space‐charge‐limited current: Application to hydrogenated amorphous silicon

1986 ◽  
Vol 60 (4) ◽  
pp. 1417-1421 ◽  
Author(s):  
K. Shimakawa ◽  
Y. Katsuma
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Space Charge Limited Current ◽  
Current Application ◽  
Limited Current ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited

Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films

1987 ◽  
Vol 95 ◽  
Author(s):  
Marvin Silver ◽  
Howard M. Branz ◽  
David Adler
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Current Response ◽  
Electronic Density ◽  
Initial Space ◽  
Limited Current ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited

AbstractWe analyze the transient response of i/n/i and i/p/i semiconductor structures in terms of space-charge-limited and emission-limited currents. In this ‘sweep-out’ experiment, an initial space-charge-limited current governed by the i-layer characteristics gives way at later times to an emission-limited current from the doped layer. The emission-limited current response can be used as a new spectroscopy for determining the electronic density of states near the mobility edge of doped semiconductors. We summarize the published experimental sweep-out data and draw conclusions about the density of electronic states of both n-type and p-type hydrogenated amorphous silicon.

Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT

2001 ◽  
Vol 664 ◽  
Author(s):  
Naser Sedghi ◽  
Bill Eccleston
Keyword(s):  
Space Charge ◽  
Density Of States ◽  
Energy Levels ◽  
Thin Film Transistor ◽  
Device Simulation ◽  
Space Charge Limited Current ◽  
Trap Energy ◽  
Limited Current ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited

ABSTRACTSteady-state space-charge limited current (SCLC) measurements are used to investigate the density of states (DOS) in the mobility gap of hydrogenated amorphous silicon (a-Si:H). The density of states is calculated by different methods based on both continuous DOS and discrete traps assumptions. The density of states found by the SCLC measurements is used to set the trap densities and trap energy levels to model a vertical a-Si:H thin-film transistor (TFT) using the Medici device simulation package. The effect of different sets of traps in the bulk of a-Si:H and variation of the physical dimensions of the device on the characteristics of the vertical TFT is studied. The simulation on the space-charge limited current is performed to verify the validity and accuracy of the SCLC method.

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