Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition

1986 ◽  
Vol 60 (5) ◽  
pp. 1648-1660 ◽  
Author(s):  
J. van de Ven ◽  
H. G. Schoot ◽  
L. J. Giling
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Metalorganic Chemical ◽  
Residual Impurities

MOCVD Growth Of GaxIn1−xAs1−ySby and GaxIn1−xSb ALLOYS: Effect of Growth Parameters on Their Solid Compositions

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
Shuwei Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Growth Kinetic ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Mocvd Growth ◽  
Growth Temperature Dependence ◽  
Metalorganic Chemical

ABSTRACTQuaternary GaxIn1−xAs1−ySby and ternary GaxIn1−xSb alloys have been grown by metalorganic chemical vapor deposition (MOCVD). The effects of growth parameters on the solid compositions, x, y for GaxIn1−xAs1−ySby and x for GaxIn1−x Sb alloys are described in detail. Concentrations of the reactants have major effects on the corresponding solid compositions in the two kinds of alloys. The growth temperature dependence of the solid compositions in both GaxIn1−xAs1−ySby and GaxIn1−xSb was obviously observed and the growth kinetic factor was considered to account for this dependence. It was found that III/V ratio in vapor has a great effect on x in GaxIn1−xSb alloy but little effect on x and y in GaxIn1−xAs1−ySby alloy.

Optical Characterization and Mapping of Four INCH InSb Epitaxial thin Films Grown on GaAs by Turbo Disk Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 450 ◽  
Author(s):  
Z. C. Feng ◽  
C. Beckham ◽  
P. Schumaker ◽  
I. Ferguson ◽  
R. A. Stall ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Thickness Distribution ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Large Area ◽  
Metalorganic Chemical

ABSTRACTA large number of 4 inch (100 mm) diameter 1–2 μm thick InSb films have been grown on GaAs by low pressure metalorganic chemical vapor deposition (MOCVD) turbo disk technology. Raman scattering microscopy was used to study the effects of III-V source ratios on the film crystalline quality and to optimize the growth parameters. Multi-point Raman measurements over the entire 4” wafer were performed to exhibit the uniformity distribution of the film crystalline quality. A FTIR reflectance mapping system has been established to map the film thickness distribution. Good uniformity of the film thickness and crystalline perfection was obtained. Raman and FTIR are showing useful tools for non-destructive characterization of large area wafers for industrial mass production.

Self-Assembled Iii-Phospide Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 583 ◽  
Author(s):  
Jae-Hyun Ryou ◽  
Uttiya Chowdhury ◽  
Russell D. Dupuis ◽  
Chavva V. Reddy ◽  
Venkatesh Narayanamurti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Self Assembled ◽  
Metalorganic Chemical

AbstractWe report InP self-assembled quantum dots embedded in In0.51Al0.49P grown by metalorganic chemical vapor deposition. Growth parameters are altered to study the InP quantum-dot growth characteristics under various growth conditions. Quantum-dot morphology is characterized using atomic-force microscopy. Also, photoluminescence studies of the light-emitting properties are performed. Direct-bandgap ternary InxAlI−xP (x=˜0.7, ˜0.85) self-assembled quantum dots are also grown and compared with InP quantum dots.

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