Response to “Comment on ‘Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature’ ” [Appl. Phys. Lett. 96, 136101 (2010)]

2010 ◽  
Vol 96 (13) ◽  
pp. 136102 ◽  
Author(s):  
Hong Ma ◽  
Zuanming Jin ◽  
Guohong Ma
Keyword(s):  
Density Dependence ◽  
Photon Energy ◽  
Carrier Density ◽  
Room Temperature ◽  
Spin Dynamics ◽  
Cdte Crystal

Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature

2009 ◽  
Vol 94 (24) ◽  
pp. 241112 ◽  
Author(s):  
Hong Ma ◽  
Zuanming Jin ◽  
Guohong Ma ◽  
Weiming Liu ◽  
Sing Hai Tang
Keyword(s):  
Density Dependence ◽  
Photon Energy ◽  
Carrier Density ◽  
Room Temperature ◽  
Spin Dynamics ◽  
Cdte Crystal

scholarly journals Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

1999 ◽  
Vol 74 (22) ◽  
pp. 3359-3361 ◽  
Author(s):  
C. Jordan ◽  
J. F. Donegan ◽  
J. Hegarty ◽  
B. J. Roycroft ◽  
S. Taniguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Carrier Density ◽  
Room Temperature

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

scholarly journals Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Taiki Hirahara ◽  
Ryoya Ebisuoka ◽  
Takushi Oka ◽  
Tomoaki Nakasuga ◽  
Shingo Tajima ◽  
...  
Keyword(s):  
Density Dependence ◽  
Carrier Density ◽  
Multilayer Graphene ◽  
Intrinsic Resistance

scholarly journals Нерезонансное обращение волнового фронта света на поверхности пленок GaN при большой мощности оптического возбуждения

2019 ◽  
Vol 53 (1) ◽  
pp. 26
Author(s):  
А.Н. Грузинцев ◽  
А.Н. Редькин
Keyword(s):  
Photon Energy ◽  
Signal Intensity ◽  
Room Temperature ◽  
Phase Conjugation ◽  
Charge Carriers ◽  
Nitrogen Laser ◽  
Free Charge ◽  
Laser Pumping ◽  
Infrared Spectral ◽  
First Time

AbstractThe possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

scholarly journals Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
W. X. Zhou ◽  
H. J. Wu ◽  
J. Zhou ◽  
S. W. Zeng ◽  
C. J. Li ◽  
...  
Keyword(s):  
Carrier Density ◽  
Room Temperature ◽  
Electronic Devices ◽  
General Concept ◽  
Polar Phase ◽  
Strongly Correlated ◽  
Two Dimensional ◽  
Single System ◽  
Oxide Interfaces ◽  
Mobile Carrier

Abstract Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba0.2Sr0.8TiO3 thin films at the LaAlO3/Ba0.2Sr0.8TiO3 interface at room temperature. The polarity of a ∼3.2 nm Ba0.2Sr0.8TiO3 thin film is preserved with a two-dimensional mobile carrier density of ∼0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO3 and the polarization of Ba0.2Sr0.8TiO3 is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

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