Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

1986 ◽  
Vol 60 (7) ◽  
pp. 2589-2595 ◽  
Author(s):  
Keung L. Luke ◽  
Li‐Jen Cheng
2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Minghua Li ◽  
Hui Shen ◽  
Lin Zhuang ◽  
Daming Chen ◽  
Xinghua Liang

In this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO2on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE) in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2(105 nm)/SiNx:H (80 nm) DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.


Solar Energy ◽  
2012 ◽  
Vol 86 (10) ◽  
pp. 3004-3008 ◽  
Author(s):  
Jie Liu ◽  
Bangwu Liu ◽  
Zenan Shen ◽  
Jinhu Liu ◽  
Sihua Zhong ◽  
...  

1996 ◽  
Author(s):  
Kevin F. Carr ◽  
N. Carlson ◽  
P. Weitzman ◽  
B. L. Sopori ◽  
C. Marshall ◽  
...  

2007 ◽  
Vol 15 (6) ◽  
pp. 493-505 ◽  
Author(s):  
A. Mette ◽  
D. Pysch ◽  
G. Emanuel ◽  
D. Erath ◽  
R. Preu ◽  
...  

2019 ◽  
Vol 675 ◽  
pp. 109-114 ◽  
Author(s):  
Jae Eun Kim ◽  
Se Jin Park ◽  
Ji Yeon Hyun ◽  
Hyomin Park ◽  
Soohyun Bae ◽  
...  

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