Minority‐carrier injection into relaxation semiconductors

Y. Moreau; J.‐C. Manifacier; H. K. Henisch

doi:10.1063/1.337076

Minority‐carrier injection into relaxation semiconductors

Journal of Applied Physics ◽

10.1063/1.337076 ◽

1986 ◽

Vol 60 (8) ◽

pp. 2904-2909 ◽

Cited By ~ 18

Author(s):

Y. Moreau ◽

J.‐C. Manifacier ◽

H. K. Henisch

Keyword(s):

Minority Carrier ◽

Carrier Injection ◽

Relaxation Semiconductors

Download Full-text

Minority carrier injection in relaxation semiconductors under illumination

Journal of Physics and Chemistry of Solids ◽

10.1016/0022-3697(76)90178-5 ◽

1976 ◽

Vol 37 (1) ◽

pp. 47-49 ◽

Cited By ~ 6

Author(s):

C. Popescu ◽

H.K. Henisch

Keyword(s):

Minority Carrier ◽

Carrier Injection ◽

Relaxation Semiconductors

Download Full-text

Minority carrier injection in relaxation semiconductors

Physical Review B ◽

10.1103/physrevb.11.1563 ◽

1975 ◽

Vol 11 (4) ◽

pp. 1563-1568 ◽

Cited By ~ 45

Author(s):

C. Popescu ◽

H. K. Henisch

Keyword(s):

Minority Carrier ◽

Carrier Injection ◽

Relaxation Semiconductors

Download Full-text

Minority carrier injection in relaxation semiconductors under illumination

Solid State Communications ◽

10.1016/0038-1098(75)90524-4 ◽

1975 ◽

Vol 17 (4) ◽

pp. ix

Author(s):

C. Popescu ◽

H.K. Henisch

Keyword(s):

Minority Carrier ◽

Carrier Injection ◽

Relaxation Semiconductors

Download Full-text

Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect

Materials Science Forum ◽

10.4028/www.scientific.net/msf.196-201.1407 ◽

1995 ◽

Vol 196-201 ◽

pp. 1407-1412 ◽

Cited By ~ 1

Author(s):

Hachiro Nakanishi ◽

Keiji Wada

Keyword(s):

Minority Carrier ◽

Deep Penetration ◽

Carrier Injection ◽

Injection Effect ◽

Induced Defects

Download Full-text

Minority carrier injection limited current in Re/4H-SiC Schottky diodes

physica status solidi (a) ◽

10.1002/pssa.200925339 ◽

2010 ◽

Vol 207 (6) ◽

pp. 1509-1513 ◽

Cited By ~ 3

Author(s):

K. Sarpatwari ◽

S. E. Mohney ◽

S. Ashok ◽

O. O. Awadelkarim

Keyword(s):

Minority Carrier ◽

Schottky Diodes ◽

Carrier Injection ◽

Limited Current

Download Full-text

Capitalizing on two dimensional minority carrier injection in silicon solar cell design

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) ◽

10.1109/wcpec.1994.520213 ◽

2002 ◽

Author(s):

C.B. Honsberg ◽

S. Edmiston ◽

L. Koschier ◽

S.R. Wenham ◽

A.B. Sproul ◽

...

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Minority Carrier ◽

Cell Design ◽

Two Dimensional ◽

Carrier Injection

Download Full-text

Carrier Injection Into Low Lifetime (Relaxation) Semiconductors

Disorder and Order in the Solid State ◽

10.1007/978-1-4613-1027-3_8 ◽

1988 ◽

pp. 77-95

Author(s):

J. C. Manifacier ◽

Y. Moreau ◽

R. Ardebili

Keyword(s):

Carrier Injection ◽

Relaxation Semiconductors

Download Full-text

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.801 ◽

2020 ◽

Vol 1004 ◽

pp. 801-807

Author(s):

Takaaki Tominaga ◽

Shiro Hino ◽

Yohei Mitsui ◽

Junichi Nakashima ◽

Koutarou Kawahara ◽

...

Keyword(s):

High Frequency ◽

Minority Carrier ◽

Total Loss ◽

Loss Reduction ◽

Carrier Injection ◽

Power Module ◽

Chip Area ◽

Dc Characteristics ◽

High Frequency Operation ◽

Switching Characteristics

A total loss reduction of 3.3 kV power module by using SiC-MOSFET embedding SBD has been demonstrated through the investigation of DC characteristics and switching characteristics. Despite 1.1 times larger on-resistance than that of conventional SiC-MOSFET due to larger cell pitch, superior switching characteristics of SiC-MOSFET embedding SBD, which are due to smaller total chip area than that of SiC-MOSFET coupled with external SBD and due to elimination of recovery charge by minority carrier injection compared with SiC-MOSFET utilizing its body diode, enable the total loss reduction especially for high frequency operation.

Download Full-text