Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

2010 ◽  
Vol 96 (12) ◽  
pp. 122108 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Jeong Hyuk Yim ◽  
Han Seok Seo ◽  
Do Hyun Lee ◽  
Chang Hyun Kim ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Barrier Layer ◽  
Gate Dielectrics ◽  
Reaction Barrier

As-deposited properties and rapid thermal annealing effects on Ti/TiN barrier layer for aluminum plug technology

1994 ◽  
Author(s):  
De-Dui Liao ◽  
Yih-Shung Lin ◽  
Hong Yang ◽  
Howard Witham ◽  
Javier Saenz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Barrier Layer ◽  
Annealing Effects

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

2013 ◽  
Vol 699 ◽  
pp. 422-425 ◽  
Author(s):  
K.C. Lin ◽  
C.H. Chou ◽  
J.Y. Chen ◽  
C.J. Li ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Property ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Dielectrics ◽  
Bottom Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

Integration of a TiN barrier layer formed by rapid thermal annealing in a 1 μm CMOS process

1995 ◽  
Vol 91 (1-4) ◽  
pp. 308-313 ◽  
Author(s):  
K.-H. Stegemann ◽  
V. Heinig ◽  
G. Fontaine ◽  
J. Palorec ◽  
C. Beyer
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Barrier Layer ◽  
Cmos Process
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