Calculation of warm electron transport in AlGaAs/GaAs single heterostructures using a Monte Carlo method

1986 ◽  
Vol 59 (11) ◽  
pp. 3798-3802 ◽  
Author(s):  
Kiyoyuki Yokoyama ◽  
Karl Hess
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Method

Simulation of Electron Transport in Silicon using Monte Carlo Method

2011 ◽  
Vol 284-286 ◽  
pp. 871-874
Author(s):  
Zan Wang ◽  
Lei Quan ◽  
Yi Wu Ruan
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Method ◽  
Electric Fields ◽  
Phonon Scattering ◽  
Mean Free Path ◽  
Intervalley Scattering ◽  
The Mean ◽  
Simulation Time ◽  
Electron Phonon Scattering

A Monte Carlo method is employed to investigate the properties of electron transport with considerations of electron-phonon scattering including intervalley scattering and intravalley scattering. Under different electric fields, the coupling relations between electrons and phonons are studied, and the behaviors of absorbing and releasing phonons from electrons are also analyzed. The results show the scattering events of absorbing phonons from electrons decrease with the increasing simulation time. At the same temperature, the mean free path of electron increases initially and then decreases with the increasing electric field intensity, and finally approaches an asymptotic value.

Neoclassical electron transport calculation by using δf Monte Carlo method

2011 ◽  
Vol 18 (3) ◽  
pp. 032511 ◽  
Author(s):  
Seikichi Matsuoka ◽  
Shinsuke Satake ◽  
Masayuki Yokoyama ◽  
Arimitsu Wakasa ◽  
Sadayoshi Murakami
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Method ◽  
Transport Calculation
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