Determination of density of localized states in amorphous silicon alloys from the low field conductance of thinn‐i‐ndiodes

1986 ◽  
Vol 59 (3) ◽  
pp. 803-807 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Amorphous Silicon ◽  
Localized States ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

Analytical Determination of Generation-Recombination Rate In Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
Jože Furlan ◽  
Slavko Amon
Keyword(s):  
Analytical Solution ◽  
Amorphous Silicon ◽  
Cross Sections ◽  
Recombination Rate ◽  
Exponential Model ◽  
Localized States ◽  
Analytical Determination ◽  
Capture Cross ◽  
Capture Cross Sections

ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

Density of Deep Bandgap States in Amorphous Silicon From the Temperature Dependence of Thin Film Transistor Current

1994 ◽  
Vol 336 ◽  
Author(s):  
T. Globus ◽  
H. C. Slade ◽  
M. Shur ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Energy Gap ◽  
Localized States ◽  
Flat Band ◽  
Gate Bias ◽  
Density Of Localized States ◽  
Wide Range

ABSTRACTWe have measured the current-voltage characteristics of amorphous silicon thin film transistors (a-Si TFTs) over a wide range of temperatures (20 to 160°C) and determined the activation energy of the channel current as a function of gate bias with emphasis on the leakage current and subthreshold regimes. We propose a new method for estimating the density of localized states (DOS) from the dependence of the derivative of activation energy with respect to gate bias. This differential technique does not require knowledge of the flat-band voltage (VFB) and does not incorporate integration over gate bias. Using this Method, we have characterized the density of localized states with energies in the range 0.15–1.2 eV from the bottom of the conduction band and have found a wide peak in the DOS in the range of 0.8–0.95 eV below the conduction band. We have also observed that the DOS peak in the lower half of the bandgap increases in magnitude and shifts towards the conduction band as a result of thermal and bias stress. We also measured an overall increase in the DOS in the upper half of the energy gap and an additional peak, centered at 0.2 eV below the conduction band, which appear due to the applied stress. These results are in qualitative agreement with the defect pool Model [1,2].

Frequency resolved EBIC measurements for determination of the density of localized states in a-Si:H

1988 ◽  
Vol 67 (5) ◽  
pp. 557-560 ◽  
Author(s):  
N.R. Rajopadhye ◽  
S.M. Babras ◽  
S.V. Bhoraskar ◽  
V.G. Bhide
Keyword(s):  
Localized States ◽  
Density Of Localized States

Determination of the density of localized states in a-Se films

1978 ◽  
Vol 45 (1) ◽  
pp. K59-K62 ◽  
Author(s):  
R. M. Mehra ◽  
A. K. Kathuria ◽  
Radhey Shyam ◽  
A. L. Dawar ◽  
P. C. Mathur
Keyword(s):  
Localized States ◽  
Density Of Localized States

Determination of the ordering in amorphous silicon alloys from Penn gap energies

1991 ◽  
Vol 137-138 ◽  
pp. 899-902
Author(s):  
S.C. Bayliss ◽  
S.J. Gurman ◽  
R. Asal ◽  
D. Hall
Keyword(s):  
Amorphous Silicon ◽  
Silicon Alloys

Determination of the Density of Localized States in a-Se Films

1978 ◽  
pp. 427-430
Author(s):  
R.M. Mehra ◽  
A K. Kathuria ◽  
Radhey Shyam ◽  
A . L. Dawar ◽  
P. C. Mathur
Keyword(s):  
Localized States ◽  
Density Of Localized States
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