Charge transport and trapping in silicon nitride‐silicon dioxide dielectric double layers

1985 ◽  
Vol 58 (11) ◽  
pp. 4300-4306 ◽  
Author(s):  
S. Manzini ◽  
F. Volonté
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Charge Transport ◽  
Double Layers

VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers

1987 ◽  
Vol 34 (11) ◽  
pp. 2386-2386
Author(s):  
A. Hiraiwa ◽  
J. Yugami ◽  
S. Ihjima ◽  
T. Kusaka ◽  
Y. Ohji
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Charge Transport ◽  
Hall Effect ◽  
Double Layers ◽  
Effect Analysis

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Reaction ergodography for silicon nitride bond formation by the nitridation of silicon dioxide

1992 ◽  
Vol 96 (7) ◽  
pp. 3029-3033 ◽  
Author(s):  
Akitomo Tachibana ◽  
Yuzuru Kurosaki ◽  
Hiroyuki Fueno ◽  
Toshiaki Sera ◽  
Tokio Yamabe
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Bond Formation

scholarly journals Simulation of Proton Beam Effects in Thin Insulating Films

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ljubinko Timotijevic ◽  
Irfan Fetahovic ◽  
Djordje Lazarevic ◽  
Milos Vujisic
Keyword(s):  
Monte Carlo ◽  
Silicon Nitride ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Monte Carlo Simulations ◽  
Proton Energy ◽  
Transport Parameters ◽  
Insulating Layer ◽  
Insulating Films ◽  
Ultrathin Layers

Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.

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