Dielectric properties of fine‐grained barium titanate ceramics

1985 ◽  
Vol 58 (4) ◽  
pp. 1619-1625 ◽  
Author(s):  
G. Arlt ◽  
D. Hennings ◽  
G. de With
1995 ◽  
Vol 10 (2) ◽  
pp. 306-311 ◽  
Author(s):  
S. Wada ◽  
T. Suzuki ◽  
T. Noma

Using titanium nitrate solution stabilized by chelation, amorphous fine particles of the Ba-Ti-O system were prepared by the mist decomposition method in air. After calcination of these particles, barium titanate ceramics were prepared using the hot uniaxial pressing method, and various properties were investigated. As a result, the grain sizes could be controlled over the range from 58 nm to 187 nm by the sintering temperatures and/or the calcination temperatures, keeping the density almost constant. Moreover, the dielectric properties of the samples showed that the relative permittivity decreased with decreasing grain size, and Curie temperature also shifted to lower temperatures in the same way. In this study, we first found that Curie temperature existed in the barium titanate ceramics with grain sizes from 58 to 147 nm.


2016 ◽  
Vol 29 (2) ◽  
pp. 285-296 ◽  
Author(s):  
Vesna Paunovic ◽  
Vojislav Mitic ◽  
Milos Marjanovic ◽  
Ljubisa Kocic

La/Mn codoped BaTiO3 ceramics with various La2O3 content, ranging from 0.3 to 1.0 at% La, were investigated regarding their microstructure and dielectric properties. The content of MnO2 was kept constant at 0.01 at% Mn in all samples. La/Mn codoped and undoped BaTiO3 were obtained by a modified Pechini method and sintered in air at 13000C for two hours. The homogeneous and completely fine-grained microstructure with average grain size from 0.5 to 1.5mm was observed in samples doped with 0.3 at% La. In high doped samples, apart from the fine grained matrix, the appearance of local area with secondary abnormal grains was observed. The dielectric properties were investigated as a function of frequency and temperature. The dielectric permittivity of the doped BaTiO3 was in the range of 3945 to 12846 and decreased with an increase of the additive content. The highest value for the dielectric constant at room temperature (er= 12846) and at the Curie temperature (er= 17738) were measured for the 0.3 at% La doped samples. The dissipation factor ranged from 0.07 to 0.62. The Curie constant (C), Curie-Weiss temperature (T0) and critical exponent (g) were calculated using the Curie-Weiss and the modified Curie-Weiss law. The highest values of Curie constant (C=3.27?105 K) was measured in the 1.0 at% La doped samples. The obtained values for g ranged from 1.04 to 1.5, which pointed out the sharp phase transformation from the ferroelectric to the paraelectric phase.


2011 ◽  
Vol 485 ◽  
pp. 39-42 ◽  
Author(s):  
Kenta Yamashita ◽  
Shigehito Shimizu ◽  
Ichiro Fujii ◽  
Kouichi Nakashima ◽  
Nobuhiro Kumada ◽  
...  

ANbO3– BaTiO3(A=K, Na, or K0.5Na0.5) system ceramics were prepared using a conventional sintering method, and their dielectric properties were investigated. It was found that the dielectric constant of KNbO3-BaTiO3and (K0.5Na0.5) NbO3- BaTiO3system ceramics did not strongly depend on temperature between 20 and 400 °C, making them useful for capacitor application.


2003 ◽  
Vol 86 (3) ◽  
pp. 511-513 ◽  
Author(s):  
Antonio Feteira ◽  
Kumaravinothan Sarma ◽  
Neil McN. Alford ◽  
Ian M. Reaney ◽  
Derek C. Sinclair

2013 ◽  
Vol 566 ◽  
pp. 34-37
Author(s):  
Kenta Yamashita ◽  
Ichiro Fujii ◽  
Kouichi Nakashima ◽  
Nobuhiro Kumada ◽  
Yoshihiro Kuroiwa ◽  
...  

In this study, 0.8 KNbO3(KN) -0.2 BaTiO3(BT) ceramics were prepared using KN powder with the diameter of 100 nm and BT powders with the diameter of 100, 300, or 500 nm. The relative densities were more than 96 % of the theoretical densities of the samples. The dielectric constant of the samples was temperature-stable at temperatures between-50 and 300 °C and it was found that the dielectric constant of the 0.8KN-0.2BT ceramics increased as the BT diameter increased.


1989 ◽  
Vol 72 (4) ◽  
pp. 605-611 ◽  
Author(s):  
Timothy R. Armstrong ◽  
Laurie E. Morgens ◽  
Alena K. Maurice ◽  
Relva C. Buchanan

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