Observation of single‐carrier space‐charge‐limited flow in nitrogen‐doped α‐silicon carbide. II. Electrical noise

1985 ◽  
Vol 58 (4) ◽  
pp. 1571-1577 ◽  
Author(s):  
S. Tehrani ◽  
L. L. Hench ◽  
C. M. Van Vliet ◽  
G. Bosman
Keyword(s):  
Silicon Carbide ◽  
Space Charge ◽  
Electrical Noise ◽  
Nitrogen Doped ◽  
Single Carrier ◽  
Carrier Space ◽  
Space Charge Limited

Pt–Cu2O–Cu single-carrier space-charge-limited diodes

1977 ◽  
Vol 55 (7-8) ◽  
pp. 735-741 ◽  
Author(s):  
F. L. Weichman ◽  
K. T. Chee
Keyword(s):  
Single Crystal ◽  
Space Charge ◽  
Applied Voltage ◽  
Conduction Mechanism ◽  
Localized States ◽  
Current Response ◽  
Valence Band Edge ◽  
Single Carrier ◽  
Carrier Space ◽  
Space Charge Limited

This paper reports on the experimental results on the characteristics of the single-crystal Cu2O diodes, annealed at a pressure of 10−6 Torr at a temperature of 800 °C. In contrast to our previous report on oxidized samples which showed the characteristics of double injection diodes, these diodes exhibit the characteristics of single-carrier space-charge-limited (SCL) conduction. The conduction mechanism was confirmed by measurements on the I–V characteristics at various temperatures, the thickness vs. current relation at a given voltage, the effect of photomemory on the I–V characteristics, and the transient current response to applied voltage steps. The results also indicate that there are continuous levels of localized states in these samples in the range 0.06 eV to 0.47 eV above the valence band edge.

Interpretation of capacitance spectra and transit times of single carrier space-charge limited transport in organic layers with field-dependent mobility

2007 ◽  
Vol 204 (7) ◽  
pp. 2402-2410 ◽  
Author(s):  
José M. Montero ◽  
Juan Bisquert ◽  
Germà Garcia-Belmonte ◽  
Henk J. Bolink ◽  
Eva M. Barea
Keyword(s):  
Space Charge ◽  
Organic Layers ◽  
Single Carrier ◽  
Transit Times ◽  
Field Dependent ◽  
Carrier Space ◽  
Space Charge Limited
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