Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage

2010 ◽  
Vol 107 (8) ◽  
pp. 084902 ◽  
Author(s):  
W. H. Chen ◽  
R. Lardé ◽  
E. Cadel ◽  
T. Xu ◽  
B. Grandidier ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Gas Pressure ◽  
Number Density ◽  
Nanowires Growth ◽  
Gold Coverage

Gold coverage and faceting of MBE grown silicon nanowires

2013 ◽  
Vol 383 ◽  
pp. 151-157 ◽  
Author(s):  
Thomas David ◽  
Luc Roussel ◽  
Thomas Neisius ◽  
Martiane Cabie ◽  
Marc Gailhanou ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Gold Coverage

A comparative study of the annealing atmosphere effect on bismuth particles dedicated for silicon nanowires growth catalyst

2021 ◽  
Vol 570 ◽  
pp. 126205
Author(s):  
R. Benabderrahmane Zaghouani ◽  
M. Yaacoubi Tabassi ◽  
J. Bennaceur ◽  
M. Srasra ◽  
H. Derouiche ◽  
...  
Keyword(s):  
Comparative Study ◽  
Silicon Nanowires ◽  
Annealing Atmosphere ◽  
Atmosphere Effect ◽  
Nanowires Growth

TESTING OF NICKEL-CHROME ALLOY AS A TIP MATERIAL FOR MULTI-TIP LANGMUIR PROBES

2014 ◽  
Vol 21 (04) ◽  
pp. 1450056 ◽  
Author(s):  
MUHAMMAD YASIN NAZ ◽  
SHAZIA SHUKRULLAH ◽  
ABDUL GHAFFAR ◽  
IMRAN SHAKIR ◽  
SAMI ULLAH ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Electron Number Density ◽  
Diagnostic System ◽  
Input Power ◽  
Repeated Measurements ◽  
Gas Pressure ◽  
Rf Discharge ◽  
Number Density ◽  
Electron Number

The electrostatic probes are considered to be the most powerful and experimentally simplest technique for plasma characterization. The objective of the work was to test the nickel-chrome alloy as probe tip material for characterization of RF discharge plasmas. In order to meet the objective, a triple Langmuir probe diagnostic system and associated driving circuit was designed and tested in inductively coupled plasma (ICP) generated by a 13.56 MHz radio frequency (RF) source. Using this probe diagnostic, the electron temperature, electron number density and ion saturation current were measured as a function of input RF power and filling gas pressure. An increasing trend was noticed in electron temperature and electron number density with input power whilst a decreasing trend was evident in these parameters for increasing nitrogen gas pressure. The overall variations in electron temperature and electron number density after repeated measurements were ranging from 5% to 12% and 3% to 13%, respectively.

Vapor–liquid–solid silicon nanowires growth catalyzed by indium: study of indium oxide effect

2019 ◽  
Vol 30 (10) ◽  
pp. 9758-9766 ◽  
Author(s):  
R. Benabderrahmane Zaghouani ◽  
M. Yaacoubi Tabassi ◽  
K. Khirouni ◽  
W. Dimassi
Keyword(s):  
Indium Oxide ◽  
Silicon Nanowires ◽  
Vapor Liquid Solid ◽  
Nanowires Growth ◽  
Vapor Liquid

Electroless selective deposition of gold nano-array for silicon nanowires growth

2014 ◽  
Vol 1 (1) ◽  
Author(s):  
E. Ruiz-Gomes ◽  
C. Herrier ◽  
A. Gouyé ◽  
A. Benkouider ◽  
P. Sudraud ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Gold Clusters ◽  
Gold Salt ◽  
Galvanic Displacement ◽  
Selective Deposition ◽  
Spontaneous Reduction ◽  
Nanowires Growth

AbstractNanopatterns of gold clusters on a large surface of oriented Si(111) substrates, from the galvanic displacement of gold salt (via the spontaneous reduction of AuCl

Large-Scale CMOS-Compatible Process for Silicon Nanowires Growth and BC8 Phase Formation

2021 ◽  
pp. 108093
Author(s):  
I. Mazzetta ◽  
F. Rigoni ◽  
F. Irrera ◽  
P. Riello ◽  
S. Quaranta ◽  
...  
Keyword(s):  
Phase Formation ◽  
Silicon Nanowires ◽  
Large Scale ◽  
Nanowires Growth ◽  
Cmos Compatible
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