Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

2010 ◽  
Vol 96 (10) ◽  
pp. 101901 ◽  
Author(s):  
G. W. Cong ◽  
R. Akimoto ◽  
S. Gozu ◽  
T. Mozume ◽  
T. Hasama ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Quantum Wells ◽  
Double Quantum ◽  
Quantum Well Intermixing ◽  
Simultaneous Generation ◽  
Intersubband Absorption

Low-energy ion-implantation-induced quantum-well intermixing

2002 ◽  
Vol 8 (4) ◽  
pp. 870-879 ◽  
Author(s):  
V. Aimez ◽  
J. Beauvais ◽  
J. Beerens ◽  
D. Morris ◽  
H.S. Lim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Low Energy ◽  
Quantum Well Intermixing

Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Lattice Mismatch ◽  
Electronic States ◽  
Double Quantum ◽  
Strain Effect ◽  
Strained Layer ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Theoretical Investigations

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

A THEORETICAL AND EXPERIMENTAL STUDY OF ELECTRONIC CONFINEMENT, COUPLING, AND TRANSLAYER INTERACTION IN NOBLE-METAL QUANTUM-WELL STRUCTURES

1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Noble Metal ◽  
Experimental Studies ◽  
Surface States ◽  
Double Quantum ◽  
Multilayer Systems ◽  
Quantum Well Structures ◽  
Double Quantum Well ◽  
Bloch Electrons

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.

Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

2000 ◽  
Vol 647 ◽  
Author(s):  
Todd W. Simpson ◽  
Paul G. Piva ◽  
Ian V. Mitchell
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Quantum Well Intermixing ◽  
Chemical Effects ◽  
M 31 ◽  
Shift Data ◽  
Fluence Dependence

AbstractIon implantation followed by rapid thermal annealing is used to induce layer intermixing and thus selectively blue-shift the emission wavelength of InP-based quantum well hetero- structures. The intermixing is greatly enhanced over thermal intermixing due to the supersaturation of defects. The magnitude of the observed blue-shift has been studied previously as a function of ion fluence and ion mass: the dependence on ion mass is well established, with heavier ions producing a larger shift. We show here that chemical effects can also play a significant role in determining the induced blue-shift. Data are presented from the implantation of the similar mass ions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- induced blue shift displays a monotonic increase with fluence, consistent with previous studies; however, the fluence dependence of Al- and Si-induced blue-shifts both deviate significantly from the behaviour for P. These results have important implications for attempts to scale intermixing behaviour with ion mass.

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