Initial phase formation and dissociation in the thin‐film Ni/Al system

1985 ◽  
Vol 58 (11) ◽  
pp. 4125-4129 ◽  
Author(s):  
E. G. Colgan ◽  
M. Nastasi ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
Initial Phase

Aluminium-Transition Metal Thin-Film Reactions

1988 ◽  
Vol 119 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Literature Review ◽  
Phase Diagrams ◽  
Phase Formation ◽  
Systematic Study ◽  
Initial Phase ◽  
Noble Metals ◽  
Rich Phase ◽  
Subsequent Phase

AbstractA systematic study of Al/metal reactions has been performed. The thin-film interactions of Al with refractory metals (Ti, V, Ta, Cr, Mo, W and Co) and near-noble metals (Ni, Pd, and Pt) have been investigated. The initial aluminide phases to grow are the Al-rich phases: TiAl3, Val3, TaAl3, Cr2Al13, MoAl12, Wal12, Co2Al9, NiAl3, Pd2Al3, and Pt2Al3 at temperatures between 225 and 525°C. With the exceptions of Val3, Pd2Al3, and Pt2Al3. these are the most Al-rich phases on the phase diagrams. Marker experiments were performed and Al was the dominant diffusing species during the growth of these phases, TiAl3, Val3, Cr2Al3, MoAl12, Co2Al2, NiAl3, Pd2Al3, and Pt2AI3. Consistent with the faster Al diffusion, which provides a greater supply of Al to the growing interface, is the growth of the most Al-rich phase initially. For the exceptions to this rule, Val3, Pd2AI3, and Pt2 Al3, the complexity of the Al-rich V, Pd, and Pt end phases may have hindered nucleation, resulting in the growth of the observed phases. The subsequent phase formation was examined in the Ni-, Pd-, and Pt-Al systems. After initial phase formation consumed all the Al or metal, subsequent phases formed in accordance with the overall stoichiometry. The results of this study, along with a brief literature review, are presented and the generalized behavior of Al/transition metal reactions discussed.

Phase formation and reaction kinetics in the thin‐film Co/GaAs system

1985 ◽  
Vol 47 (9) ◽  
pp. 934-936 ◽  
Author(s):  
A. J. Yu ◽  
G. J. Galvin ◽  
C. J. Palmstro/m ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Reaction Kinetics ◽  
Phase Formation

Reactive Phase Formation in Thin Films: Evolution of Grain Structure

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsent ◽  
J. Rickman ◽  
M. Dahmstt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Formation ◽  
Experimental Studies ◽  
Grain Structure ◽  
Structure Evolution ◽  
Future Research ◽  
Polycrystalline Materials ◽  
Product Phase ◽  
Nucleation Kinetics

AbstractIt is a well known fact that the properties and performance of polycrystalline materials, including polycrystalline thin films, are strongly affected by the grain structure. Therefore, in treating reactive phase formation in these films, it is (or it will inevitably be) necessary to quantify the grain structure of reactant and product phases and its evolution during the course of the reaction. Theoretical models and the conventional view of thin film reactions, however, have been largely extensions, to small and finite dimensions, of theories and descriptions developed for bulk diffusion couples. These models and descriptions primarily focus on the growth stage and to a much lesser extent on the nucleation stage. Consequently, these models and descriptions are not able to treat the development of product phase grain structure. Recent calorimetric investigations of several thin film systems demonstrate the importance of nucleation kinetics (and hence nucleation barriers) in product phase formation and provide quantitative measures of the thermodynamics and kinetics of formation of the product phases, thereby allowing some degree of comparison with reaction models. Furthermore, microstructural investigations of thin-film reactions demonstrate the non-planarity of the growth front and highlight the role of reactant-phase grain boundaries. In this paper, a summary of these experimental studies and recent theoretical treatments, which combine nucleation and growth in an integrated manner, is presented, with particular emphasis on the Nb/Al system. These experiments and models lead to a new view of reactive phase formation and grain structure evolution as one in which the latter is an integral part of the former. Based on this view, directions for future research are discussed.

Cu(In,Ga)S2 Phase Formation from Metallic Cu-In-Ga Precursor Stacks in Rapid Thermal Processes

2001 ◽  
Vol 668 ◽  
Author(s):  
Axel Neisser ◽  
Jacobo Álvarez-García ◽  
Lorenzo Calvo-Barrio ◽  
Reiner Klenk ◽  
Thomas W. Matthes ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Phase Formation ◽  
Thin Film Solar Cell ◽  
Depth Distribution ◽  
Film Growth ◽  
Thermal Processes ◽  
Sulfur Vapor ◽  
Thermal Systems

ABSTRACTThis contribution compares the growth of Cu(Ga,In)S2 based thin film solar cell absorbers in rapid thermal systems using sulfur vapor Sx or H2S/Ar as reactive atmosphere, focusing on Ga-related influences on film growth and phase formation. Cu-In alloying in the precursor is kinetically hindered by the presence of Cu-Ga phases. In sulfur vapor Ga-containing samples sulfurize via an intermediate CuIn2S8 phase, thereby delaying the full sulfurization and recrystallization of the layer. In contrast, in H2S/Ar fast Ga-In interdiffusion and no intermediate chalcogenide phases are observed. The inhomogeneous Ga depth distribution usually reported for sequentially prepared Cu(In,Ga)S2 films can be assigned to the segregation of CuGaS2 prior to CuInS2.

On the mechanism of the cubic phase formation in the boron nitride thin-film systems

2001 ◽  
Vol 79 (3) ◽  
pp. 353-355 ◽  
Author(s):  
Sakhrat Khizroev ◽  
Dmitri Litvinov
Keyword(s):  
Thin Film ◽  
Boron Nitride ◽  
Phase Formation ◽  
Cubic Phase
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