Carrier transfer from wetting layer to quantum dots studied by cw-resolved and time-resolved photoluminescence in CdSe/ZnSe quantum dot system

2010 ◽  
Vol 107 (6) ◽  
pp. 063517 ◽  
Author(s):  
Tae Soo Kim ◽  
Byoung Woo Lee ◽  
Eunsoon Oh ◽  
Sanghoon Lee ◽  
J. K. Furdyna
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Wetting Layer ◽  
Time Resolved ◽  
Carrier Transfer ◽  
Znse Quantum Dot ◽  
Time Resolved Photoluminescence

Localization and interdot carrier transfer in CdSe and CdZnMnSe quantum dots determined by cw and time-resolved photoluminescence

2007 ◽  
Vol 90 (20) ◽  
pp. 201916 ◽  
Author(s):  
J. H. Park ◽  
D. G. Choi ◽  
T. K. Lee ◽  
Eunsoon Oh ◽  
Sanghoon Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Carrier Transfer ◽  
Time Resolved Photoluminescence

Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

Degradation Studies of Colloidal Quantum Dot Light-Emitting Diodes

2011 ◽  
Vol 1286 ◽  
Author(s):  
Jie Liu ◽  
Chuang Xie ◽  
Yu Zhang ◽  
Wenjia Hu ◽  
Shawn Pickering ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Quantum Dot ◽  
Thermal Instability ◽  
Light Emitting Diodes ◽  
Degradation Mechanism ◽  
Time Resolved ◽  
Light Emitting ◽  
Colloidal Quantum Dot ◽  
Time Resolved Photoluminescence

ABSTRACTThe degradation mechanism of CdSe/ZnS quantum dots (QDs) light-emitting diodes (LEDs) was investigated with steady-state and time-resolved photoluminescence measurements. Our study reveals that the degradation is associated with the decreasing quantum efficiency of the CdSe/ZnS QDs in the devices. Two mechanisms that cause the efficiency reduction were verified in the experiments: i.e., thermal instability and luminescence quenching.

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Short Period ◽  
Time Resolved Photoluminescence

Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1439-L1441 ◽  
Author(s):  
Atsushi Tackeuchi ◽  
Yoshiaki Nakata ◽  
Shunichi Muto ◽  
Yoshihiro Sugiyama ◽  
Tatsuya Usuki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Carrier Transfer

Steady state and time resolved photoluminescence properties of CuInS2/ZnS quantum dots in solutions and in solid films

2015 ◽  
Vol 167 ◽  
pp. 333-338 ◽  
Author(s):  
Nikolaos Droseros ◽  
Kostas Seintis ◽  
Mihalis Fakis ◽  
Spiros Gardelis ◽  
Androula G. Nassiopoulou
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Solid Films ◽  
Time Resolved Photoluminescence

State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence ◽  
State Filling
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