Metastable phase formation in titanium‐silicon thin films

1985 ◽  
Vol 57 (12) ◽  
pp. 5240-5245 ◽  
Author(s):  
Robert Beyers ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Metastable Phase ◽  
Silicon Thin Films ◽  
Metastable Phase Formation ◽  
Titanium Silicon

scholarly journals Modeling of metastable phase formation diagrams for sputtered thin films

2016 ◽  
Vol 17 (1) ◽  
pp. 210-219 ◽  
Author(s):  
Keke Chang ◽  
Denis Music ◽  
Moritz to Baben ◽  
Dennis Lange ◽  
Hamid Bolvardi ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Metastable Phase ◽  
Metastable Phase Formation

scholarly journals Metastable phase formation of Pt-X (X = Ir, Au) thin films

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Aparna Saksena ◽  
Yu-Chuan Chien ◽  
Keke Chang ◽  
Pauline Kümmerl ◽  
Marcus Hans ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Metastable Phase ◽  
Metastable Phase Formation ◽  
Au Thin Films

Metastable phase formation in laser-processed Al-Ge sputtered thin films

1987 ◽  
Vol 22 (7) ◽  
pp. 2346-2350 ◽  
Author(s):  
F. Catalina ◽  
C. N. Afonso ◽  
M. C. Quintana ◽  
C. Ortiz
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Metastable Phase ◽  
Metastable Phase Formation

The Phase Formation Sequence In Titanium-Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
Robert Beyers ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Integrated Circuit ◽  
Intermediate Phase ◽  
Metastable Phase ◽  
Equilibrium Phase ◽  
Impurity Content ◽  
High Resistivity ◽  
Si Films ◽  
Titanium Silicon

ABSTRACTThe reliable use of TiSi2 in integrated circuit metallizations will depend in part on an intimate knowledge of the effects of processing variables — such as annealing time, temperature, and ambient — on the phase formation sequence. For this reason, transmission electron microscopy has been used to investigate the formation of TiSi2 thin films on silicon substrates [1]. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti + 2 Si) mixture, we find that a high resistivity (∼60 μΩcm), metastable phase — TiSi2(C49 or ZrSi2 structure) — forms prior to the desired low resistivity (∼15 μΩcm), equilibrium phase — TiSi2(C54 structure). In titanium-silicon diffusion couples, a thin layer of TiSi is also present on top of the metastable TiSi2- For processing temperatures above 550°C, the available data suggest that the metastable TiSi2 forms first and acts as a template for subsequent nucleation of the TiSi phase. In codeposited (Ti + 2 Si) films, TiSi2(C49 structure) is the only intermediate phase. The temperature at which the C49 structure transforms to the C54 structure increases significantly as the film impurity content increases. Differences in earlier reports of TiSi2 formation [2–5] appear to be resolved if x-ray diffraction peaks attributed to Ti5Si3 and TiSi were actually from the metastable TiSi2

Metastable Phase Formation and Stimulated Transitions in Metallic Nanometer Films

2003 ◽  
Vol 788 ◽  
Author(s):  
Dirk C. Meyer ◽  
Alexandr A. Levin ◽  
Stefan Braun ◽  
Andre Gorbunov ◽  
Michael Mertig ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Energy Supply ◽  
Metastable Phase ◽  
Solid State Reactions ◽  
Interesting Application ◽  
Technical Potential ◽  
Energetic State ◽  
Metastable Phase Formation ◽  
Deposition Techniques

ABSTRACTDue to the non-equilibrium nature of deposition techniques, thin films can exhibit an energetic state far from thermodynamic equilibrium. Energy supply can stimulate a transition into other metastable states. Examples of metastable phase formation presented in this work are thermally stimulated solid state reactions in metallic nanometer Al/Co/Ni multilayers and phase formation and transition in metallic alloy films of the elemental materials system Fe-Cr. An interesting application illustrates the technical potential of metastable nanometer films.

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