High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology

2010 ◽  
Vol 96 (11) ◽  
pp. 113502 ◽  
Author(s):  
H. Frenzel ◽  
F. Schein ◽  
A. Lajn ◽  
H. von Wenckstern ◽  
M. Grundmann
2012 ◽  
Vol 717-720 ◽  
pp. 1253-1256
Author(s):  
Jie Yang ◽  
John Fraley ◽  
Bryon Western ◽  
Marcelo Schupbach ◽  
Alexander B. Lostetter

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with harsh environment sensors that deliver weak AC output signals to improve signal quality and noise immunity.


1989 ◽  
Vol 10 (8) ◽  
pp. 358-360 ◽  
Author(s):  
C.R. Zeisse ◽  
R. Nguyen ◽  
L.J. Messick ◽  
P. Saunier ◽  
K.L. Moazed

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  

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