Flat‐band voltage and surface states in amorphous silicon‐based alloy field‐effect transistors

1984 ◽  
Vol 56 (2) ◽  
pp. 382-386 ◽  
Author(s):  
M. S. Shur ◽  
M. Hack ◽  
C. Hyun
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Surface States ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Silicon Based

Characteristics of Amorphous Silicon Based Alloy Field Effect Transistors

1984 ◽  
Vol 33 ◽  
Author(s):  
M. Shur ◽  
M. Hack ◽  
C. Hyun
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Energy Gap ◽  
Field Effect Transistors ◽  
Localized States ◽  
Flat Band ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
A New Technique ◽  
Silicon Based

ABSTRACTWe have developed a new theory to describe the current-voltage characteristics of amorphous silicon based alloy field effect transistors. We show that the transition from below to above threshold operation occurs when the Fermi level in the accumulation region moves from the deep to tail localized states in the energy gap and that the field effect mobility is dependent on gate voltage. We also propose a new technique to determine the flat-band voltage from the I-V characteristics in the below threshold regime.

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2000 ◽  
Vol 77 (2) ◽  
pp. 250-252 ◽  
Author(s):  
J. P. Ibbetson ◽  
P. T. Fini ◽  
K. D. Ness ◽  
S. P. DenBaars ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Surface States ◽  
Polarization Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

scholarly journals Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Monica Bollani ◽  
Marco Salvalaglio ◽  
Abdennacer Benali ◽  
Mohammed Bouabdellaoui ◽  
Meher Naffouti ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Spontaneous Formation ◽  
Surface Energy Anisotropy ◽  
Energy Anisotropy ◽  
On Chip ◽  
Silicon Based ◽  
Nano Wires

AbstractLarge-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of $$\sim$$~1/60000 and self-assembled $$\sim$$~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.

Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Flat Band ◽  
Transitional Region ◽  
Flat Band Voltage ◽  
Amorphous Silicon Dioxide ◽  
Silicon Structures

ABSTRACTAmorphous insulator/amorphous silicon structures show, under bias-stress conditions, a drift of the electrical characteristics. In the present work, in order to discriminate the main source of instability in amorphous silicon dioxide/amorphous silicon Thin-Film Transistors, the determination of both threshold voltage and flat-band voltage has been performed after bias-stressing the devices with different gate voltages and at different temperatures. Flat-band voltage was determined by the space-charge photomodulation technique. From the close correlation observed between the two quantities, we conclude that the predominant instability mechanism is represented by change in the gate insulator charge at and near the insulator/semiconductor interface. Time evolution of the threshold voltage shifts has been investigated as a function of stress bias and temperature. The data are explained in terms of a new model based on the dispersive charge injection (hopping of electrons via localised states) into the first 2–3 nm of the gate insulator adjacent to die semiconductor layer (transitional region). Possible origin of the transitional region can be related to the reduction of the gate insulator induced by activated hydrogen, as suggested by photoemission experiments performed with synchrotron radiation on SiO2 bombarded with low energy (100 eV) H-ions.

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