A novel structure, high conversion efficiency p‐SiC/graded p‐SiC/i‐Si/n‐Si/metal substrate‐type amorphous silicon solar cell

1984 ◽  
Vol 56 (2) ◽  
pp. 538-542 ◽  
Author(s):  
Koeng Su Lim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Yukimoto ◽  
M. Aiga

ABSTRACTAmorphous SiGe:H alloy is the key material in achieving high conversion efficiency with tandem-type amorphous silicon alloy solar cells. Status and issues for this key material are discussed, and efforts made to irprove it are reviewed to obtain directions for higher quality a-SiGe:H alloys. An application of the improved alloy to tandem-type solar cell to achieve 9.6% efficiency for the cell size of 100 cm2 is reported.


1984 ◽  
Vol 5 (8) ◽  
pp. 315-318 ◽  
Author(s):  
S. Yamazaki ◽  
A. Mase ◽  
K. Urata ◽  
K. Shibata ◽  
H. Shinohara ◽  
...  

2010 ◽  
Vol 663-665 ◽  
pp. 1077-1080 ◽  
Author(s):  
Yue Hui Hu ◽  
Hai Jun Xu ◽  
Hao Gao ◽  
Yi Chuan Chen

The pyramid-like textured ZnO film was prepared directly by magnetron sputtering on the self-supporting substrate of ZnO:Al film fabricated by sol-gel. The performance of amorphous silicon solar cell has been studied using the textured ZnO film as a front electrode. It was found that: (1) using the textured ZnO film as an amorphous silicon solar cell front electrode, it can be improved the open voltage, but the fill factor and conversion efficiency was depraved; and (2) inserting a protocrystalline silicon buffer layer between ZnO and p-a-SiC:H, the performance of solar cell was improved obviously. For example, its conversion efficiency increases from 7.3% for the SnO2: FTCO to 7.9% for the ZnO/pc-Si:H TCO.


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